Ultra-Dense 16x56Gb/s NRZ GeSi EAM-PD Arrays Coupled to Multicore Fiber for Short-Reach 896Gb/s Optical Links

Heyn, Peter De; Kopp, Victor I.; Srinivasan, S. A.; Verheyen, Peter; Park, J.; Wlodawski, Mitchell; Singer, Jonathan; Neugroschl, Dan; Snyder, Bradley; Balakrishnan, Sadhishkumar; Lepage, Guy; Pantouvaki, Marianna; Absil, P.; Campenhout, Joris Van

doi:10.1364/ofc.2017.th1b.7

Cited by 18 publications

(16 citation statements)

References 1 publication

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“…The 16-channels of the demonstrator are driven at 56 Gb/s and are tested sequentially. An open eye diagram with an SNR of 3.05 to 3.92 dB has been recorded at 1565 nm (L-band) when driven with 2.5 V p−p RF signal and -2.5 V reverse bias for the photodiode [35].…”

Section: A Imec's Silicon Photonics Platformmentioning

confidence: 99%

Open-Access Silicon Photonics Platforms in Europe

Rahim

Goyvaerts

Szelag

et al. 2019

IEEE J. Select. Topics Quantum Electron.

102

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Offering open-access silicon photonics-based technologies has played a pivotal role in unleashing this technology from research laboratories to industry. Fabless enterprises rely on the open-access of these technologies for their product development. In the last decade, a diverse set of open-access technologies with medium and high technology readiness levels have emerged. This paper provides a review of the open-access silicon and silicon nitride photonic IC technologies offered by the pilot lines of European research institutes and companies. The

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Section: A Imec's Silicon Photonics Platformmentioning

confidence: 99%

Open-Access Silicon Photonics Platforms in Europe

Rahim

Goyvaerts

Szelag

et al. 2019

IEEE J. Select. Topics Quantum Electron.

102

View full text Add to dashboard Cite

show abstract

“…By changing the bias voltage of a given structure, its behavior could be changed from one to the other. The EAMs were driven with a peak-to-peak voltage of 2.5 V and the PDs were biased at -2.5 V. A test array of 16 channels was fabricated and back-to-back testing was performed with fiber coupling 6 . The EAM array showed a dynamic ER in the range of 2.7 dB to 3.3 dB.…”

Section: Active Componentsmentioning

confidence: 99%

High-bandwidth density optically interconnected terabit/s boards

Yin

Thourhout

Sández

et al. 2018

Metro and Data Center Optical Networks and Short-Reach Links

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Within the European Project TERABOARD, a photonic integration platforms including electronic-photonic integration is developed to demonstrate high bandwidth high-density modules and to demonstrate cost and energy cost target objectives. Large count high bandwidth density EO interfaces for onboard and intra-data center interconnection are reported. For onboard large count interconnections a novel concept based on optical-TSV interconnection platform with no intersections and no WDM multiplexing is reported. All input/output coupler arrays based on a pluggable silica platform are reported as well.

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“…To this end, various Si/CMOS transceiver solutions have been reported to achieve high-speed direct-detection (DD), which is currently the dominant solution for short-reach applications due to its simplicity and low cost [9][10]. In [11], an ultra-dense transceiver using an array of Germanium-Silicon (GeSi) electro-absorption modulators (EAMs) and photodiodes was demonstrated with the help of a multicore fibre. A 100-Gb/s real-time non-return-to-zero on-off keying (NRZ-OOK) link with a GeSi EAM and 130-nm SiGe BiCMOS-based transceiver chipsets was reported in [12], where up to 2-km long transmission over standard single-mode fibre (SSMF) was demonstrated to validate its potential for short-reach applications.…”

Section: Introductionmentioning

confidence: 99%

High-Speed DD Transmission Using a Silicon Receiver Co-Integrated With a 28-nm CMOS Gain-Tunable Fully-Differential TIA

Hong

Lacava

et al. 2021

J. Lightwave Technol.

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We report >100-Gb/s direct-detection (DD) transmission using an integrated silicon optical receiver, which comprised a fully-differential 28-nm complementary metal-oxide-semiconductor (CMOS) transimpedance amplifier (TIA) wire-bonded to a Silicon-Germanium (SiGe) balanced photodiode (PD). The fully-differential TIA architecture enabled significant bit-error-rate (BER) and signal-to-noise ratio improvements over a single-output TIA design when introducing it to the DD transmission. We experimentally validated its effectiveness in both back-to-back (B2B) and 2-km long standard single-mode fibre (SSMF) links using 50/100-Gb/s signals, including Nyquist on-off keying (OOK), Nyquist 4-ary pulse amplitude modulation (PAM4), uniformly-loaded DD optical orthogonal frequency division multiplexing (DDO-OFDM) and adaptively-loaded DDO-OFDM. Furthermore, we demonstrate that the integrated optical receiver was capable of balancing the trade-off between its electrical bandwidth and transimpedance gain by simply adjusting a voltage supply to the TIA. Without the need for optical amplification and while keeping the BERs below the 7% forward error correction limit, up to 173.22-Gb/s and 139.86-Gb/s adaptively-loaded DDO-OFDM transmission was achieved for B2B and 2-km transmission, respectively. The demonstrated results highlight the potential of the integrated silicon optical receiver, fabricated using the standard CMOS process for high-speed and short-reach optical interconnects.

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Ultra-Dense 16x56Gb/s NRZ GeSi EAM-PD Arrays Coupled to Multicore Fiber for Short-Reach 896Gb/s Optical Links

Cited by 18 publications

References 1 publication

Open-Access Silicon Photonics Platforms in Europe

Open-Access Silicon Photonics Platforms in Europe

High-bandwidth density optically interconnected terabit/s boards

High-Speed DD Transmission Using a Silicon Receiver Co-Integrated With a 28-nm CMOS Gain-Tunable Fully-Differential TIA

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