Ultra compact RFICs using three-dimensional MMIC technology

Kaho,; Yamaguchi, Naohito; Nishikawa,; Toyoda,; Uehara,

doi:10.1109/mwsym.2010.5515356

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2016

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“…These transmission Iines bring large chip size and high cost. In contrast, standard CMOS MMICs have 6-12 metallayers, these can use thin-film micro-strip (TFMS) lines [9]. The matching circuits in CMOS can be quite sm aller than that of GaN MMIC.…”

Section: Introductlonmentioning

confidence: 99%

Design of C-band rectifier with Watt-class DC output using 0.18µm CMOS and GaN diode

Takano

Kishikawa

Miyachi

et al. 2016

2016 IEEE Wireless Power Transfer Conference (WPTC)

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This paper proposes a novel rectifier design method using a standard 0.18Jlm CMOS MMIC and a GaN (Gallium Nitride) diode by hybrid semiconductor integrated circuit (HySIC) technology. The target RF input power is around 10W at 5.8 GHz and output DC power is 2-3W. To achieve such high input/output power with small CMOS chip, low impedance and wide thin-fiIm micro-strip (TFMS) Iines are used as impedance matching circuits. To protect capacitors from high voltage generation, se ries capacitor pairs are used as DC block and RF short circuits. A high linearity 3-stage nMOS SPST switch is also employed for the impedance match tuning. The GaN diode is modeled by measurement, and designed to be connected via eight bonding wires. The simulation results show that input return loss is lower than -14 dB, power efficiency is around 30% with 10 w RF input. The chip size is only 1.2 mm x 2.3 mm.Index Terms -Microwave power transmission, rectifier, standard CMOS, GaN diode.

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Section: Introductlonmentioning

confidence: 99%