2011 Twenty-Sixth Annual IEEE Applied Power Electronics Conference and Exposition (APEC) 2011
DOI: 10.1109/apec.2011.5744760
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Ultra compact, low thermal impedance and high reliability module structure with SiC Schottky Barrier Diodes

Abstract: An advanced module structure for taking advantage of superior characteristics of Silicon Carbide (SiC) device was researched and developed. This structure can realize about four times of power rating density and one half of thermal impedance compared to that of conventional structure. Also, this structure achieved to have higher reliability by applying epoxy molding structure and copper pin connection to conduct current to/from power chips instead of aluminum bonding wire.

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Cited by 6 publications
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“…This is because the working temperature in typical electronic components ranges from 50 to 300 °C [ 26 ]. Similarly, in automobiles, the operating temperature of logic devices is less than 200 °C [ 27 ]. Moreover, in military applications, some electronic devices need to maintain a working temperature of less than 125 °C for ideal operation [ 28 ].…”
Section: Finite Element Analysismentioning
confidence: 99%
“…This is because the working temperature in typical electronic components ranges from 50 to 300 °C [ 26 ]. Similarly, in automobiles, the operating temperature of logic devices is less than 200 °C [ 27 ]. Moreover, in military applications, some electronic devices need to maintain a working temperature of less than 125 °C for ideal operation [ 28 ].…”
Section: Finite Element Analysismentioning
confidence: 99%