Full SiC power module with advanced structure and its solar inverter application

Hinata, Yuichiro; Horio, Masafumi; Ikeda, Yoshinari; Yamada, Ryuji; Takahashi, Yoshikazu

doi:10.1109/apec.2013.6520272

Cited by 48 publications

(21 citation statements)

References 3 publications

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“…The current unbalance of the paralleled SiC MOSFETs in Fig 21(a) and Fig. 21 (b) can be described as (16) and (17). With (16) and (17), it is clear that the current unbalance of the paralleled two SiC MOSFETs with the auxiliary source is reduced by a factor of (2L b1 +L s12 )/(2L b1 +L s12 +2L b +L 12 ).…”

Section: Improved Layout Of Sic Mosfet Power Modulementioning

confidence: 99%

“…21 (b) can be described as (16) and (17). With (16) and (17), it is clear that the current unbalance of the paralleled two SiC MOSFETs with the auxiliary source is reduced by a factor of (2L b1 +L s12 )/(2L b1 +L s12 +2L b +L 12 ). In the case of paralleling more than 2 SiC MOSFETs, the current unbalance can be mitigated even more because the current coupling effect increases with the number of paralleled dies.…”

Section: Improved Layout Of Sic Mosfet Power Modulementioning

confidence: 99%

“…Furthermore, in a SiC MOSFET multichip module, it is also important to characterize the effect of circuit layout mismatch on the current distribution among the dies. The switching characteristic and thermal performance of SiC MOSFET modules have been discussed in [17], [20]- [22]. However, the current distribution among the paralleled dies has not been studied yet.…”

Section: Introductionmentioning

confidence: 99%

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Influences of Device and Circuit Mismatches on Paralleling Silicon Carbide MOSFETs

Munk‐Nielsen

Wang

et al. 2016

IEEE Trans. Power Electron.

215

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This paper addresses the influences of device and circuit mismatches on paralleling the Silicon Carbide (SiC) MOSFETs. Comprehensive theoretical analysis and experimental validation from paralleled discrete devices to paralleled dies in multichip power modules are first presented. Then, the influence of circuit mismatch on paralleling SiC MOSFETs is investigated and experimentally evaluated for the first time. It is found that the mismatch of the switching loop stray inductance can also lead to on-state current unbalance with inductive output current, in addition to the on-state resistance of the device. It further reveals that circuit mismatches and a current coupling among the paralleled dies exist in a SiC MOSFET multichip power module, which is critical for the transient current distribution in the power module. Thus, a power module layout with an auxiliary source connection is developed to reduce such a coupling effect. Lastly, simulations and experimental tests are carried out to validate the analysis and effectiveness of the developed layout.

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Section: Improved Layout Of Sic Mosfet Power Modulementioning

confidence: 99%

Section: Improved Layout Of Sic Mosfet Power Modulementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Influences of Device and Circuit Mismatches on Paralleling Silicon Carbide MOSFETs

Munk‐Nielsen

Wang

et al. 2016

IEEE Trans. Power Electron.

215

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“…Because it is a normally-off type device and easy to drive, it is often preferred to the JFET and the BJT. Various kinds of SiC MOSFET based power modules have been presented, e. g. in [7]- [ 12]. This paper presents a 1200-V 20-A full SiC boost chopper module designed for high frequency and high temperature operation.…”

Section: Introductionmentioning

confidence: 99%

Full silicon carbide boost chopper module for high frequency and high temperature operation

Pettersson

Kicin

Holm

et al. 2014

2014 International Power Electronics Conference (IPEC-Hiroshima 2014 - ECCE ASIA)

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This paper presents a 1200-V 20-A full silicon carbide boost chopper module designed for high tempera ture and high frequency operation. The developed module is based on one silicon carbide metal oxide semiconductor field efl"ect transistor chip and two parallel connected silicon carbide schottky diode chips manufactured by Cree, Inc.The static and dynamic characteristics of the module have been experimentally determined and its performance tested in a 2-kW boost converter. The test results show that the developed module performs well and is able to provide a good conversion efficiency even at high switching frequency.

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“…These benefits can be listed as higher efficiency, higher switching frequency, and higher temperature of operation [1]. The benefits of SiC technology have been identified in many applications, such as power factor correction [2], telecom [3], microgrids [4], wind power [5], high-voltage direct current transmission [6], modular multilevel converters [7], [8], inverters [9]- [11], automotive applications [12]- [14], solar power [16], and dc-dc converters [17], [18].…”

mentioning

confidence: 99%

Reliability Analysis of a High-Efficiency SiC Three-Phase Inverter

Colmenares

Sadik

Hilber

et al. 2016

IEEE J. Emerg. Sel. Topics Power Electron.

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Abstract-Silicon carbide as an emerging technology offers potential benefits compared with the currently used silicon. One of these advantages is higher efficiency. If this is targeted, reducing the on-state losses is a possibility to achieve it. Parallel-connecting devices decrease the on-state resistance and therefore reduce the losses. Furthermore, increasing the amount of components such as parallel connection of devices introduces an undesired tradeoff between efficiency and reliability, since an increased component count increases the probability of failure. A reliability analysis has been performed on a three-phase inverter rated at 312 kVA, using parallel-connected power modules. This analysis shows that the gate voltage stress has a high impact on the reliability of the complete system. Decreasing the positive gate-source voltage could, therefore, increase the reliability of the system approximately three times without affecting the efficiency significantly. Moreover, adding redundancy in the system could also increase the mean time to failure by approximately five times.

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Full SiC power module with advanced structure and its solar inverter application

Cited by 48 publications

References 3 publications

Influences of Device and Circuit Mismatches on Paralleling Silicon Carbide MOSFETs

Influences of Device and Circuit Mismatches on Paralleling Silicon Carbide MOSFETs

Full silicon carbide boost chopper module for high frequency and high temperature operation

Reliability Analysis of a High-Efficiency SiC Three-Phase Inverter

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