Ultra-broadband infrared metasurface absorber: reply

Guo, Wenliang; Liu, Yuexia; Han, Tong

doi:10.1364/oe.27.005351

Cited by 2 publications

(2 citation statements)

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“…The initial designs in the literature lacked mechanisms to trap the EMWs inside the structure and, consequently, EMWs were not fully harvested and they achieved a low bandwidth . Confinement of EMWs inside the structure was achieved by introducing a new architecture that is a metal–insulator—metal (MIM) cavity design with patterned top layers . These configurations are based on the cancellation of EMWs that move in the upward and downward directions between two metallic layers.…”

Section: Introductionmentioning

confidence: 99%

“…[6,7] Confinement of EMWs inside the structure was achieved by introducing a new architecture that is a metal-insulator-metal (MIM) cavity design with patterned top layers. [8][9][10][11][12][13][14][15][16][17] These configurations are based on the cancellation of EMWs that move in the upward and downward directions between two metallic layers. However, they necessitate a complex fabrication route due to requiring electron-beam lithography (EBL).…”

mentioning

confidence: 99%

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Lithography‐Free Random Bismuth Nanostructures for Full Solar Spectrum Harvesting and Mid‐Infrared Sensing

Soydan

Ghobadi

Yıldırım

et al. 2019

Advanced Optical Materials

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A lithography‐free, double‐functional single bismuth (Bi) metal nanostructure is designed, fabricated, and characterized for ultrabroadband absorption in the visible (vis) and near‐infrared (NIR) ranges, and for a narrowband response with ultrahigh refractive index sensitivity in the mid‐infrared (MIR) range. To achieve a large‐scale fabrication of the design in a lithography‐free route, the oblique‐angle deposition approach is used to obtain densely packed and randomly spaced/oriented Bi nanostructures. It is shown that this fabrication technique can provide a bottom‐up approach to controlling the length and spacing of the design. The characterization findings reveal a broadband absorbance above 0.8 in vis and NIR, and a narrowband absorbance centered around 6.54 µm. Dense architecture and extraordinary permittivity of Bi provide strong field confinement in ultrasmall gaps between nanostructures, and this can be utilized for a sensing application. An ultrahigh sensitivity of 2151 nm refractive‐index unit (RIU–1) is acquired, which is, as far as it is known, the experimentally highest sensitivity attained so far. The simple and large‐scale compatible fabrication route of the design together with the extraordinary optical response of Bi coating makes this design promising for many optoelectronic and sensing applications.

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Section: Introductionmentioning

confidence: 99%