Ultra-Broadband Infrared Absorber Based on LiF and NaF

Xi, 陈曦 Chen; Wenrui, 薛文瑞 Xue; Chen, 赵晨 Zhao; Changyong, 李昌勇 Li

doi:10.3788/aos201838.0123002

Cited by 4 publications

(1 citation statement)

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“…As a window material, LiF crystal is an excellent achromatic and polychromatic material, which is widely * Author to whom any correspondence should be addressed. used in thermal imaging systems, aerospace optical systems and excimer laser optical systems [7,8].…”

Section: Introductionmentioning

confidence: 99%

Infrared LiF ridge waveguide fabricated by carbon ion irradiation

Cheng¹,

Song²,

Li³

2022

Laser Phys.

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We report on the fabrication of an optical ridge waveguide in lithium fluoride crystal using the method of C5+ ion irradiation with precise diamond blade dicing. The guiding properties of the waveguide at the infrared wavelengths of 1064 nm, 2200 nm and 4000 nm are investigated in detail. All the near-field modal profiles exhibit single-mode guidance and the minimum propagation losses of the ridge waveguide after annealing are reduced to 0.7 dB cm−1 (λ = 1064 nm), 0.4 dB cm−1 (λ = 2200 nm) and 0.2 dB cm−1 (λ = 4000 nm), respectively. The Raman spectroscopy of the waveguide shows that the ion irradiation does not obviously change the lattice structure of the crystal.

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Section: Introductionmentioning

confidence: 99%

Infrared LiF ridge waveguide fabricated by carbon ion irradiation

Cheng¹,

Song²,

Li³

2022

Laser Phys.

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Absorption and Reflection of Switchable Multifunctional Metamaterial Absorber Based on Vanadium Dioxide

Liu,

Lv,

Wang

2024

Applied Sciences

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A dynamically tunable terahertz broadband absorber based on the metamaterial structure of vanadium dioxide (VO2) is proposed and analyzed. The absorber consists of two patterned VO2 layers and a metal bottom layer separated by two polytetrafluoroethylene (PTFE) dielectric layers. Simulation results show that the absorption exceeds 90% in the frequency range of 2.4–11 THz with a relative bandwidth of 128.4% under normal incidence. When VO2 is in the metal phase, the designed absorber functions as an ideal absorber. The absorption rate can be flexibly adjusted from 2% to 99% as vanadium dioxide transitions from the insulator phase to the metal phase. Therefore, the newly developed broad structure has the capability to seamlessly transition between functioning as an absorber or reflector through modifications in the conductivity of VO2 from the insulator phase to the metal phase. Moreover, further insight into the underlying physical processes can be gained by studying the insensitivity of the proposed absorber to the polarization of incident light and its ability to achieve high absorption across a wide range of incident angles. Impedance matching theory and electric field distribution of the absorber are investigated. The THz absorber has many potential applications in fields such as THz sensors, modulation, and switches.

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