Ultimate multibit 1T-FeRAM with selectively nucleated grown single-grain PbZr0.52Ti0.48O3for very-large-scale-integrated memory

Park, Jae Hyo; Kim, Hyung Yoon; Jang, Gil Su; Ahn, Donghwan; Joo, Seung Ki

doi:10.1088/0022-3727/49/7/075106

J. Phys. D: Appl. Phys.

2016

DOI: 10.1088/0022-3727/49/7/075106

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Ultimate multibit 1T-FeRAM with selectively nucleated grown single-grain PbZr_0.52Ti_0.48O₃for very-large-scale-integrated memory

Jae Hyo Park¹,

Hyung Yoon Kim²,

Gil Su Jang³

et al.

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Cited by 5 publications

(2 citation statements)

References 60 publications

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“…Stable multibit operation of a single-grain PZT 1T-FeRAM has been reported. 32 A 60 nm channel length PZT FeRAM showed multilevel programming, fast switching, and data retention up to 10 5 s. 33 Multibit flexible FeRAMs have been reported using gate-controlled polarization of the ferroelectric P(VDF-TrFE) gate. 34,35 A multibit dual gate transistor was realized by selectively programming the ferroelectric top gate.…”

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confidence: 99%

Retention of intermediate polarization states in ferroelectric materials enabling memories for multi-bit data storage

Zhao

Katsouras

Asadi

et al. 2016

Applied Physics Letters

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A homogeneous ferroelectric single crystal exhibits only two remanent polarization states that are stable over time, whereas intermediate, or unsaturated, polarization states are thermodynamically instable. Commonly used ferroelectric materials however, are inhomogeneous polycrystalline thin films or ceramics. To investigate the stability of intermediate polarization states, formed upon incomplete, or partial, switching, we have systematically studied their retention in capacitors comprising two classic ferroelectric materials, viz. random copolymer of vinylidene fluoride with trifluoroethylene, P(VDF-TrFE), and Pb(Zr,Ti)O3. Each experiment started from a discharged and electrically depolarized ferroelectric capacitor. Voltage pulses were applied to set the given polarization states. The retention was measured as a function of time at various temperatures. The intermediate polarization states are stable over time, up to the Curie temperature. We argue that the remarkable stability originates from the coexistence of effectively independent domains, with different values of polarization and coercive field. A domain growth model is derived quantitatively describing deterministic switching between the intermediate polarization states. We show that by using well-defined voltage pulses, the polarization can be set to any arbitrary value, allowing arithmetic programming. The feasibility of arithmetic programming along with the inherent stability of intermediate polarization states makes ferroelectric materials ideal candidates for multibit data storage.

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Retention of intermediate polarization states in ferroelectric materials enabling memories for multi-bit data storage

Zhao

Katsouras

Asadi

et al. 2016

Applied Physics Letters

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“…This Article has been retracted by the authors. The data presented in Figures 1e, 1g, 1h, 2b-d, 4a-b, 4d-e, 6a-b and 7a-b were manipulated and are duplicated in other papers 1 2 3 4 5 .…”

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confidence: 99%

Retraction Note: Integrating Epitaxial-Like Pb(Zr,Ti)O3 Thin-Film into Silicon for Next-Generation Ferroelectric Field-Effect Transistor

Park¹,

Kim²,

Jang³

et al. 2016

Sci Rep

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Improved resistive switching performance in Cu-cation migrated MoS2 based ReRAM device incorporated with tungsten nitride bottom electrode

Prakash

Sharma

Kumar

et al. 2019

Current Applied Physics

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Ultimate multibit 1T-FeRAM with selectively nucleated grown single-grain PbZr_0.52Ti_0.48O₃for very-large-scale-integrated memory

Cited by 5 publications

References 60 publications

Retention of intermediate polarization states in ferroelectric materials enabling memories for multi-bit data storage

Retention of intermediate polarization states in ferroelectric materials enabling memories for multi-bit data storage

Retraction Note: Integrating Epitaxial-Like Pb(Zr,Ti)O3 Thin-Film into Silicon for Next-Generation Ferroelectric Field-Effect Transistor

Improved resistive switching performance in Cu-cation migrated MoS2 based ReRAM device incorporated with tungsten nitride bottom electrode

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