Improved resistive switching performance in Cu-cation migrated MoS2 based ReRAM device incorporated with tungsten nitride bottom electrode

Prakash, Ravi; Sharma, Shubham; Kumar, Anuj; Kaur, Davinder

doi:10.1016/j.cap.2018.10.013

Cited by 23 publications

(17 citation statements)

References 26 publications

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“…For bipolar RRAM, there are two main types of conductive filaments: metal type and oxygen vacancy type. The formation and breakage of conductive filaments in both metal conductive filament-type RRAM and oxygen vacancy conductive filament-type RRAM originate from the local movement and redistribution of ions/atoms. The conductive filaments of metal conductive filament-type RRAM are generally formed along grain boundaries, along dislocations and at other locations where there are structural defects. For oxygen vacancy conductive filament-type RRAM, the conductive filaments are generally composed of oxygen vacancies.…”

Section: Resultsmentioning

confidence: 99%

“…Graphene, − transitional-metal dichalcogenides (TMDs), − transition-metal carbides and nitrides (MXenes), hexagonal boron nitride (hBN) and semiconductor polymers , are two-dimensional (2D) storage materials discovered in recent years that can be used to fabricate not only rigid RRAM but also flexible RRAM. RRAM based on a 2D material storage layer − , shows better performance potential than that based on oxide materials. ,,,− The performance index of RRAM based on 2D materials developed in just over 10 years (solid blue dots − , in Figure S1) has caught up with that based on oxide materials (hollow violet dots ,,,− in Figure S1), which have been investigated for 60 years. However, the reported values of the SET voltage, SET power and switching ratio of oxide and 2D material RRAMs with better performance (switching ratio ≥10 3 , endurance ≥10 3 ) are all to the lower right of the dotted line in Figure S1.…”

Section: Introductionmentioning

confidence: 99%

“…Graphene, 24−35 transitional-metal dichalcogenides (TMDs), 36−40 transition-metal carbides and nitrides (MXenes), 41 hexagonal boron nitride (hBN) 42 and semiconductor polymers 43,44 are two-dimensional (2D) storage materials discovered in recent years that can be used to fabricate not only rigid RRAM but also flexible RRAM. RRAM based on a 2D material storage layer [24][25][26][27][28][29][30][31][32][33][34][35][36][37][38][39]43 shows better performance potential than that based on oxide materials. 8,16,18,20−23 The performance index of RRAM based on 2D materials developed in just over 10 years (solid blue dots [24][25][26][27][28][29][30][31][32][33][34][35][36][37][38][39]43 in Figure S1) has caught up with that based on oxide materials (hollow violet dots 8,16,18,20−23 in Figure S1), which have been investigated for 60 years.…”

Section: Introductionmentioning

confidence: 99%

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Ultralow-Power RRAM with a High Switching Ratio Based on the Large van der Waals Interstice Radius of TMDs

et al. 2022

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Low power and high switching ratio are the development direction of the next generation of resistive random access memory (RRAM). Previous techniques could not increase the switching ratio while reducing the SET power.Here, we report a method to fabricate low-power and highswitching-ratio RRAM by adjusting the interstice radius (r g ) between the van der Waals (vdW) layers of transitional-metal dichalcogenides (TMDs), which simultaneously increases the switching ratio and reduces the SET power. The SET voltage, SET power, switching ratio and endurance of the device are strongly correlated with r g . When the ratio of r g to the radius of the metal ions that form the conductive filaments (r g /r Ag + ) is near 1, the SET voltage and SET power vertically decrease while the switching ratio vertically rises with increasing r g /r Ag + . For the fabricated Ag/[SnS 2 /poly(methyl methacrylate)]/Cu RRAM with an r g /r Ag + of 1.04, the SET voltage, SET power and switching ratio are 0.14 V, 10 −10 W and 10 6 , respectively. After 10 4 switching cycles and a 10 4 s retention time, the switching ratio of the device can still be stable above 10 6 . Bending has no influence on the performance of the device when the bending radius is not <2 mm.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Ultralow-Power RRAM with a High Switching Ratio Based on the Large van der Waals Interstice Radius of TMDs

et al. 2022

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“…The filament of catalytic TaO x grows toward the Cu electrode, which creates cations. [23][24][25] On return from the saturation current limit, the medium is full of space charges along with the ions. This is also dictated by the fitting of Mott-Gurney's law and we marked it as ON state.…”

Section: Resultsmentioning

confidence: 99%

“…Finally, the current reaches the compliance value. In Step 3, the device follows the Mott-Gurney law from compliance value to 0.75 V. The Mott-Gurney law is given by [24] J ¼ 9 8…”

Section: Resultsmentioning

confidence: 99%

Effect of Light and Heat on Polymer‐Based Resistive Random Access Memory

Mahato

Medwal

Deen

et al. 2021

Physica Rapid Research Ltrs

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Resistive random access memory (ReRAM) in metal/insulator/ metal (MIM) configurations, due to many properties, such as lower error rate, stability, applications in neuromorphic computing, memory and logic operations, and compatibility with already existing CMOS technology, has drawn huge research interest. [1][2][3][4][5] The resistive properties of transition metal oxides have been studied for two centuries. [6] However, resistive switching between two different resistive states was reported in 1967 for the first time. [7] Research efforts have been made to design two terminal flexible ReRAM devices with low leakage current, high endurance, and high integration density [8,9] in various active media including chalcogenides such as GeSbTe, GeSe, AgInSbTe, [10] halide and oxide perovskites such as BiFeO 3 , PCMO, and a-LSMO, [11] and other oxides such as SiO 2 , HfO 2 , Ta 2 O 5 , TiO 2 , and NiO. [12,13] A variety of materials such as ferroelectric tunnel junction BaTiO 3 = LaSrMnO 3 , [14] quantized conductance in graphene nanoplatelet ribbons suspended in 3-hexylthiophene polymer, [15] and chitosan with Pt/Ag doping [16] have been reported to achieve multiple resistive states. Recently, exploration of valance change resistive effect in polymer medium has drawn huge attention because its sensitivity to external stimuli. Polymers have added advantage over other media because they are cheap, sensitive, flexible and environment friendly, which can be used to realize the wearable flexible electronics devices. [17][18][19][20] Smart polymers, which can change their shape, volume, color, and electric resistance with external stimuli factors such as pH, electric field, magnetic field, and temperature, can provide an avenue to tune their resistive states with external factors. Deen et al. has successfully demonstrated the phase transition with temperature in poly(N-isopropylacrylamide) (PNIPAM). [2,21] This multiresponsive behavior with said external environmental factors allows us to achieve multifunctional memory elements for electronic and bioelectronics devices. [22] However, considerable efforts have not been made to investigate the effect of light and thermal energy on the resistive states of the smart polymer-based memristors. In this article, we demonstrate the repeatability, light, and heat sensitivity of valence change polymer ReRAM using PRPC as the active medium.

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Magnetron Sputtered Thin Films Based on Transition Metal Nitride: Structure and Properties

Bharani

Sharma

2022

Physica Status Solidi (a)

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Transition metal nitride (TMN) thin films exhibit outstanding physical, chemical, and mechanical properties, making them best suitable for a wide variety of applications. The most commonly used technique to produce metal nitride thin films with specific properties at optimum conditions is magnetron sputtering. Considering this, this review begins with advancements in the sputtering process from basic diode sputtering to the most commonly used pulsed magnetron sputtering. Further, the literature on several TMNs deposited via magnetron sputtering is summarized, referring to several articles that have been published during the last decades. The main emphasis lies on nitride-based thin films' structural, morphological, and mechanical aspects for various applications. In addition, the influence of reactive gas flow rate, substrate temperature, layer thickness, postannealing temperature, substrate bias voltage, protective layers, the sputtering technique adopted, etc. on the quality and performance of the thin films is also focused. The overall review work can be beneficial for the students and researchers in understanding the basic sputtering phenomenon with its advancements, the relationship between deposition parameters and surface properties, and to know the current research trend for exploring several research gaps in the literature.

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Improved resistive switching performance in Cu-cation migrated MoS2 based ReRAM device incorporated with tungsten nitride bottom electrode

Cited by 23 publications

References 26 publications

Ultralow-Power RRAM with a High Switching Ratio Based on the Large van der Waals Interstice Radius of TMDs

Ultralow-Power RRAM with a High Switching Ratio Based on the Large van der Waals Interstice Radius of TMDs

Effect of Light and Heat on Polymer‐Based Resistive Random Access Memory

Magnetron Sputtered Thin Films Based on Transition Metal Nitride: Structure and Properties

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