UHV-TEM-REM Studies of Si(111) Surfaces

Yagi, Kazuichi; Yamanaka, Akira; Sato, Hiroaki; Shima, M.; Ohse, H.; Ozawa, S.; Tanishiro, Y.

doi:10.1143/ptps.106.303

Cited by 30 publications

(3 citation statements)

References 24 publications

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“…The Wulff's theorem states that the ratio h n /γ n (γ n : interface tension, or step tension in our case) is n-independent, leading to a relation γ n /γ n ′ = h n /h n ′ for arbitrary n and n ′ . From the photographs of the experimental observation [27,28], we have h2 11 /h 2 11 = 1.2. This ratio gives the ratio between the step free energies corresponding to these directions.…”

Section: Application To Si(111) Surfacementioning

confidence: 99%

Statistical mechanical calculation of anisotropic step stiffness of a two-dimensional hexagonal lattice-gas model with next-nearest-neighbour interactions: application to Si(111) surface

Akutsu

1999

J. Phys.: Condens. Matter

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We study a two-dimensional honeycomb lattice gas model with both nearest-and next-nearest-neighbor interactions in a staggered field, which describes the surface of stoichiometrically binary crystal. We calculate anisotropic step tension, step stiffness, and equilibrium island shape, by an extended random walk method. We apply the results to Si(111) 7×7 reconstructed surface and high-temperature Si(111) 1×1 surface. We also calculate inter-step interaction coefficient.

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Section: Application To Si(111) Surfacementioning

confidence: 99%

Statistical mechanical calculation of anisotropic step stiffness of a two-dimensional hexagonal lattice-gas model with next-nearest-neighbour interactions: application to Si(111) surface

Akutsu

1999

J. Phys.: Condens. Matter

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“…1617 The presence of a surface step is expected to produce a dipole strain field 17 in the bulk crystal. This was reported earlier by Yagi et al 19 Quantitative methods for analyzing surface steps, such as those outlined in the previous paragraph, can be applied to the problem of domain boundaries to give estimates of the magnitude of the surface stress. Quantitative image simulations determined the tangential dipole component to be 1.46 ± 0.3 e\7A, assuming a normal dipole component of 0.58 eVA calculated from experimental values of surface stress 18 and step height.…”

Section: Isolated Surfacementioning

confidence: 73%

Visualization of Dynamic Near-Surface Processes

Twesten¹,

Gibson²,

Ross³

1994

MRS Bull.

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IntroductionElectron microscopy has played an undeniably important role in the development and understanding of new materials. One particular method, plan-view transmission electron microscopy (TEM), has been used to reveal many aspects of materials and to help answer questions that are not accessible by other methods. In planview TEM, materials are studied either by the image contrast caused by diffraction or by direct diffraction analysis. The studies are often at a somewhat lower resolution than is possible with some other electron-based microscopies or, in the case of diffraction, must be interpreted in terms of an average effect. Nevertheless, plan-view TEM is very useful because properties at these intermediate length scales typically determine important materials characteristics. It is plan-view microscopy that gives us the big picture of what is happening in a material.Until recently, TEM studies of materials have entailed comparing samples taken at various stages of processing and trying to observe and understand the mechanisms that determine the material behavior. With the advent of controllable specimen environments, materials processing has been taken into the TEM, allowing direct observation of the microstructural development. Here we will focus particularly on surface and near-surface processes, such as oxidation.

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“…[1][2][3] Its strengths are the combination of real space and diffraction information, and the reasonable penetration of high-energy electrons. Thus, dislocations, faults, and crystal domains can be examined in films up to ϳ0.5 m thick by plan-view methods.…”

Section: Introductionmentioning

confidence: 99%