We have used microprobe RHEED and a convex curved substrate to study the terrace-width dependence of equilibrium surface structures on vicinal Si(001). We observe a transition from double to single domains of the 2x 1 reconstruction in periodic [110] step arrays that occurs gradually over a range of miscut angle from 0° to 5°, and is independent of temperature over the measured range of 500-800°C. Possible mechanisms for this transition and its relation to a transition in step heights are described.
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The growth of thin Pd2Si films on Si(111) surfaces is studied using in situ transmission electron microscope under ultrahigh vacuum conditions. No immediate reaction of deposited Pd with Si is observed at room temperature. At ∼200 °C, uniform Pd2Si films can be formed. The thin Pd2Si films are found to grow into strained islands at elevated temperatures. Interfacial misfit dislocations associated with interfacial steps propagate across the strained islands, causing the islands to grow layer-by-layer at the interface. The strain fields associated with the misfit dislocations are believed to be responsible for this behavior.
Using diffraction contrast in a transmission electron microscope, we show that the subsurface strain around a monatomic step can be revealed on Si(111). The strain appears because small associated lattice plane rotations change the Bragg conditions locally. By image matching with models of the strain field, we are able to identify the magnitude of the strain at the step. While monolayer steps at surfaces have been previously observed, weak beam images reveal contrast which allows for the direct analysis of the associated strain.
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