1857
DOI: 10.1002/andp.18571780905
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Ueber die elektrostatische Induction und die Verzögerung des Stroms in Flaschendrähten

Abstract: 1. X X I X , p . 385. I ) Bd. 79. 1850. S. 481. -Annules de clrirn. et de plr-ys. 3 m e S d r .

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Cited by 283 publications
(99 citation statements)
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“…2 In fact, the atmospheric nonequilibrium plasma was developed over 100 years ago by generating ozone using dielectric barrier discharges. 3 Compared with low-pressure plasmas, atmospheric pressure plasmas provide various advantages including reduction in equipment cost and enhancement in plasma chemistry. Atmospheric pressure plasmas have found applications in thin film deposition, etching, decomposition of hazardous pollutants, polymer modification, and sterilization, among others.…”
Section: Optical Emission Spectroscopy Of Atmospheric Pressure Microwmentioning
confidence: 99%
“…2 In fact, the atmospheric nonequilibrium plasma was developed over 100 years ago by generating ozone using dielectric barrier discharges. 3 Compared with low-pressure plasmas, atmospheric pressure plasmas provide various advantages including reduction in equipment cost and enhancement in plasma chemistry. Atmospheric pressure plasmas have found applications in thin film deposition, etching, decomposition of hazardous pollutants, polymer modification, and sterilization, among others.…”
Section: Optical Emission Spectroscopy Of Atmospheric Pressure Microwmentioning
confidence: 99%
“…IRST formal reports, written by Siemens [1], addressing the study of the dielectric barrier discharges (DBDs), date from 19th century. For the first DBD reactors, mainly studied for the Ozone production, simple and low-cost voltage-mode supplies were employed.…”
mentioning
confidence: 99%
“…222 Investigations in 1869 by Marcellin Berthelot (1827-1907), a famous French synthetic chemist, on the decomposition of gases such as methane [CH 4 ] in glow discharges 223 led to the development of plasmaenhanced chemical vapor deposition (PE-CVD). In 1876, J. Ogier reported PE-CVD growth of Si:H and SiN x films from silane [SiH 4 ] and SiH 4 þ N 2 precursors, respectively.…”
mentioning
confidence: 99%