Über neue halbleitende Verbindungen II

Welker, H.

doi:10.1515/zna-1953-0406

Cited by 97 publications

(6 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…In the year 1951, Heinrich Welker became a co‐worker of Siemens with the position of the head of the solid‐state physics research laboratory in Erlangen. He immediately started with the investigation of the III–V compound semiconductors, which he had also discovered . Very soon the first single crystals of InSb, GaSb, AlSb, InAs, and GaAs were grown by Welkers’ co‐workers.…”

Section: History Of Semiconductor Crystal Growth In the Erlangen Areamentioning

confidence: 99%

Erlangen—An Important Center of Crystal Growth and Epitaxy: Major Scientific Results and Technological Solutions of the Last Four Decades

Friеdrich

Müller

2019

Crystal Research and Technology

View full text Add to dashboard Cite

This article describes the historic development of the Erlangen Crystal GrowthLaboratory CGL from its beginnings in 1974 at the chair of Materials of Electrical Engineering (Department of Material Science) of the University of Erlangen-Nuremberg until its current status as a large department "Materials" of the Erlangen Fraunhofer-Institute for Integrated Systems and Device Technology. Essential developments and scientific achievements in the various fields of crystal growth and epitaxy are presented from the early period until today.

show abstract

Section: History Of Semiconductor Crystal Growth In the Erlangen Areamentioning

confidence: 99%

Erlangen—An Important Center of Crystal Growth and Epitaxy: Major Scientific Results and Technological Solutions of the Last Four Decades

Friеdrich

Müller

2019

Crystal Research and Technology

View full text Add to dashboard Cite

show abstract

“…If the deposition temperatures exceed 1873 K, a-SiC becomes the predominant phase which grows on these crystals (1,2). The ideal substrate for the vapor-phase epitaxial growth of the cubic (zinc blende structure) fl-SiC films is obviously a single crystal of the same material, primarily because of the exact matching of the lattice constant and the coefficient of thermal expansion.…”

Section: Thermal Stresses In Heteroepitaxial Beta Silicon Carbide Thimentioning

confidence: 99%

“…For these reasons, the following solid-state electrochemical cells were investigated where P(.o.,/P,.o is the ratio of the partial pressure of CO~ to that of CO in the reference gas mixture, AG"[CO-CO~] is the standard Gibbs energy change for the reaction 1 CO + ~ O~ = CO2 [2] and AGf~ is the standard Gibbs energy change for the formation of 1 mol of indium sesquioxide.…”

mentioning

confidence: 99%

“…Indium antimonide is the only existing intermetallic compound in the In-Sb system; it exhibits a high electron mobility and presents the lowest bandgap energy of the group III-V semiconducting compounds (1)(2)(3). The pure compound and mixed crystals containing InSb are of current interest as host materials for a variety of solid-state electronic devices (4)(5)(6)(7).…”

mentioning

confidence: 99%

See 1 more Smart Citation

Solid‐State Electrochemical Study of In‐Sb Liquid Alloys

Anderson

Donaghey

1984

J. Electrochem. Soc.

View full text Add to dashboard Cite

The indium activity in liquid In-Sb solutions is measured in the following high temperature solid-state galvanic cellsThe measurements indicate a moderate negative deviation from ideal solution behavior and are in close agreement with previous studies. The results are compared with the available calorimetric and phase-diagram determinations and are found to be consistent with them. An expression for the standard Gibbs energy of formation of solid InSb is presented that is consistent with the direct EMF measurements, calorimetric studies, reported phase diagram, and results of this study. The nonrandom two-liquid theory is found to adequately represent the liquid mixture thermodynamic data.) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 141.211.4.224 Downloaded on 2015-06-21 to IP Vol. 131, No. 12 In-Sb LIQUID ALLOYS ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 141.211.4.224 Downloaded on 2015-06-21 to IP

show abstract

“…un premier niveau accepteur à 0,02 eV se manifeste jusqu'à -170 °C; un second niveau accepteur à 2 X 1û-3 eV apparaît ensuite entre -170 °C et -250 °C (1). Sur la figure 6, nous avons aussi porté la courbe s = ¡(1fT) obtenue par H. Welker [1] sur un échantillon massif de type p ; la simi litude des courbes obtenues pour le matériau massif et pour les couches minces est frappante.…”

unclassified