Über neue halbleitende Verbindungen

Welker, H.

doi:10.1515/zna-1952-1110

Cited by 255 publications

(24 citation statements)

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“…Interaction between covalent and ionic bonding results in a strengthening of the bond, as compared to 100 % covalent or 100% ionic bonding. A high electron mobility follows it (Welker, 1952) and also a relationship between Knoop Hardness H and interatomic distance of the form H oc r-(~-3). The number m is greatest for the A(III)B(V) and A(II)B(VI) compounds, (Wolff, Toman, Jr., Field & Clark, 1955).…”

Section: (D) Diamond-structure Materialsmentioning

confidence: 93%

Microcleavage, bonding character and surface structure in materials with tetrahedral coordination

Wolff¹,

Broder²

1959

Acta Cryst

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The investigation of mierocleavage, defined as the separation of crystals parallel to certain crystallographic directions, proves useful for detecting atomic arrays held together by strong bonds (PBC vectors). Estimates of ionic and covalent bonding character can be made and surface properties can be investigated.A structural collapse of the crystal surface layers in some materials with a low coordination

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Section: (D) Diamond-structure Materialsmentioning

confidence: 93%

Microcleavage, bonding character and surface structure in materials with tetrahedral coordination

Wolff¹,

Broder²

1959

Acta Cryst

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“…In the year 1951, Heinrich Welker became a co‐worker of Siemens with the position of the head of the solid‐state physics research laboratory in Erlangen. He immediately started with the investigation of the III–V compound semiconductors, which he had also discovered . Very soon the first single crystals of InSb, GaSb, AlSb, InAs, and GaAs were grown by Welkers’ co‐workers.…”

Section: History Of Semiconductor Crystal Growth In the Erlangen Areamentioning

confidence: 99%

Erlangen—An Important Center of Crystal Growth and Epitaxy: Major Scientific Results and Technological Solutions of the Last Four Decades

Friеdrich

Müller

2019

Crystal Research and Technology

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This article describes the historic development of the Erlangen Crystal GrowthLaboratory CGL from its beginnings in 1974 at the chair of Materials of Electrical Engineering (Department of Material Science) of the University of Erlangen-Nuremberg until its current status as a large department "Materials" of the Erlangen Fraunhofer-Institute for Integrated Systems and Device Technology. Essential developments and scientific achievements in the various fields of crystal growth and epitaxy are presented from the early period until today.

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“…In 1952 H. Welker recognized the similarity between the properties of compounds made by combining atoms of groups III and V of the periodic table with those of germanium and silicon, and appreciated the importance of this new class of semiconductors, the III-V compounds [66]. The new materials attracted great interest as alternatives to silicon and germanium in devices and provided many more opportunities for testing an emerging theoretical foundation for semiconductor science.…”

Section: S Gallium Arsenide and Other Lll-v Compoundsmentioning

confidence: 99%

Semiconductors at IBM: Physics, Novel Devices, and Materials Science

Keyes

Nathan

1981

IBM J. Res. & Dev.

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Work on semiconductor physics, devices, and materials science carried on at IBM in the last twenty-five years is reviewed. Topics covered include hot electrons, inversion layers, the injection laser, electroluminescence, the Gunn effect, MESFETs, solar cells, superlattices, and amorphous materials and effects.The earliest IBM work was devoted to the theory of transport properties, primarily the Hall effect, and to the study of electron states. One significant early result was obtained by J. A. Swanson [2], who showed that the wellknown result for the saturation Hall constant R. (the Copyright IWl by International Business Machines Coiporation. Copying is permitted without payment of royalty provided that (1) each reproduction is done without alteration and (2) the Journal reference and IBM copyright notice are included on the first page. The title and abstract may be used without further permission in computer-based and other information-service systems. Permission to republish other excerpts should be obtained from the Editor. 779

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Über neue halbleitende Verbindungen

Abstract: Die vorliegende Arbeit beschäftigt sich mit der Nachbildung der halbleitenden Elemente der vierten Hauptgruppe

Cited by 255 publications

References 0 publications

Microcleavage, bonding character and surface structure in materials with tetrahedral coordination

Microcleavage, bonding character and surface structure in materials with tetrahedral coordination

Erlangen—An Important Center of Crystal Growth and Epitaxy: Major Scientific Results and Technological Solutions of the Last Four Decades

Semiconductors at IBM: Physics, Novel Devices, and Materials Science

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