Über die Halbleitereigenschaften des Kupferoxyduls. XII Die Leitfähigkeit des Kupferoxyduls innerhalb des Existenzgebietes bei hohen Temperaturen im Bereich kleiner Drucke

Abstract

k e r &fit 12 Abbildungen Inhaltsiibersicht Torr gefundene starke Abfall der elektrischen Leitfiihigkeit des Kupferoxyduls im Gebiet von 700--1000°C auf fehlerhaften Messtmgen beruht. Unter Ausschaltung des Fehlers wird im gesamten tlntersuchten Gebiet die GesetzmaBigkei t 1/n x -Po, mit n M 8 bestiitigt und die Austrittsarbeit zu 1,30 eV (0,65 eV) bestimnit. Eine Diskussion des Knudsen-Effektes in bezug auf diese Messungen zeigt, daI3 er ent gegen den bisherigen Betrachttmgen keineMefiwert,vediilschMg bedingt. Es wird gezeigt, daB der bisher bei Sauerstoffdrucken < Die Existenzgrenze Cu,O/CuO wird nochmals bestimmt.

Point defects diagrams for pure and doped copper oxide Cu2±δO in the temperature range of 873–1473K

“…However, when the oxygen pressure decreases, these values rapidly increase to large values. The character of these changes is consistent with the experimentally observed changes in the dependence of the electrical conductivity on p O 2 [33][34][35][36][37][38][39][40][41][42][43][44][45]. As shown in Figs.…”

“…On the other hand, the exponents 1/n he ¼ 1/n s ffi 1/8 for the dependence of the concentration of electronic defects and the electrical conductivity on p O 2 indicated the dominance of electron holes [33][34][35][36][37][38][39][40][41][42][43][44][45]. Fig.…”

“…The above studies show that the copper oxide is a p-type semiconductor and that the dominant defects are electron holes. This type of defect is indicated by both the dependence of the electrical conductivity on the oxygen pressure (exponent: 1/6-1/8) [14,[33][34][35][36][37][38][39][40][41][42][43][44][45] and relatively high values of the thermoelectric force, which increase with the reduction of the oxygen pressure [44,50]. As already mentioned, the oxide reaches the stoichiometric composition in the range of its existence.…”

“…The possibility of the existence of oxygen vacancies was previously postulated by Bloom [32] whilst analyzing the optical and electrical properties of Cu 2 À d O. Parallel to the studies of the deviation from the stoichiometry, other studies were performed that concerned the electrical conductivity [32][33][34][35][36][37][38][39][40][41][42][43][44][45], Seebeck effect [34,44,[46][47][48][49][50] and Hall effect [51][52][53][54][55][56][57]. The above studies show that the copper oxide is a p-type semiconductor and that the dominant defects are electron holes.…”