U-groove isolation technique for high speed bipolar VLSI's

Hayasaka, A.; Tamaki, Y.; Kawamura, M.; Ogiue, K.; Ohwaki, S.

doi:10.1109/iedm.1982.190212

Cited by 23 publications

(8 citation statements)

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“…Isolation technology using silicon trenches is employed in high-speed bipolar integrated circuits (1,2) and in latchup-free CMOS devices (3). A high density MOS dynamic RAM cell utilizes trench sidewalls to increase storage capacitance (4).…”

Section: Introductionmentioning

confidence: 99%

Structural Effects on a Submicron Trench Process

Chin

Dhong

Long

1985

J. Electrochem. Soc.

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Recently, silicon trenches have been widely used for device isolation or three‐dimensional capacitors in dynamic memories. In this work, trenches with submicron openings have been fabricated and several structure‐dependent effects were discovered. A reactive ion etching rate in the vertical direction inside a trench decreases significantly as the aspect ratio (depth/width) becomes larger. A bottle‐shaped profile due to undercutting starts to appear with trenches whose openings are smaller than a micrometer and becomes worse as the width decreases. A film thickness on sidewalls for refilling trenches shows no strong dependence on the structural aspect when chemically vapor deposited at low pressure.

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Section: Introductionmentioning

confidence: 99%

Structural Effects on a Submicron Trench Process

Chin

Dhong

Long

1985

J. Electrochem. Soc.

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“…the segments in the opposit e direction by nRp and nRT, respectively. The total shift ntot, by which each segment is shifted, is the sum of four contributions ntot = net + nap -f nRT + nsp [1] where net is the etching rate of nonpassivated silicon by ion-assisted chemical etching, which is equal to zero on the surface passivated by deposited material, nRe is the redeposition rate of backscattered material from the discharge, nat is the redeposition rate of material originating in the trench, and nsp in the sputtering rate of redeposited material by physical ion bombardment. It is known that a redeposited material or a polymer layer can inhibit the chemical attack, and it is assumed that the passivated layer is attacked only by physical ion sputtering.…”

Section: Theoreticalmentioning

confidence: 99%

“…Nitride films are generally obtained by decomposition of silane and ammonia (1). These films are reported to be less efficient with respect to ionic contamination than phos-phosilicate glass (PSG) but are not responsible for dipole polarization effects.…”

Section: Introductionmentioning

confidence: 99%

“…The most popular applications are circuit and transistor isolation (1,2), and high density DRAM storage capacitor (3). However, some problems exist in the deep trench etching processes, notably, an undesirable etching shape, a decrease in the etching rate, and surface contamination (4).…”

mentioning

confidence: 99%

“…Trench formation by dry etching processes is attracting much attention because of the continuously increasing density of circuits and the trend toward three-dimensional devices. The most popular applications are circuit and transistor isolation (1,2), and high density DRAM storage capacitor (3). However, some problems exist in the deep trench etching processes, notably, an undesirable etching shape, a decrease in the etching rate, and surface contamination (4).…”

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confidence: 99%

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Redeposition during Deep Trench Etching

Lii

Jorné

1990

J. Electrochem. Soc.

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In reactive ion etching, redeposited materials from the plasma and the trench can significantly alter the trench profile. A simple model, which takes into account simultaneous ion-assisted etching and redeposition mechanisms, is presented. Using this model, a computer simulation, based on the string-point model, is performed on the evolution of a deep trench profile. The redeposited materials from the plasma and the trench region, coupled with a moving boundary scheme, allow the shape evolution of the etching profile to be computed. The computer simulation shows that defected ions, polymer deposition, and polymer sputtering are important factors in determining the etching profile of silicon trench. Under significant bombardment of deflected ion on the sidewalls of the trench, the redeposited material from the trench is found to be more effective in blocking the etching of the sidewalls during trench etching.Trench formation by dry etching processes is attracting much attention because of the continuously increasing density of circuits and the trend toward three-dimensional devices. The most popular applications are circuit and transistor isolation (1, 2), and high density DRAM storage capacitor (3). However, some problems exist in the deep trench etching processes, notably, an undesirable etching shape, a decrease in the etching rate, and surface contamination (4).Although the technique of plasma etching is widely used in semiconductor fabrication, the control of the process outputs is largely empirical. In spite of many attempts to describe trends in plasma etching and because of its complexity, the precise nature of plasma etching ~s not fully understood. The difficulty in investigating plasma etching lies in its many variables and the high degree of nonlinearity. In brief, the etching of a surface consists of five fundamental steps: (i) reactants transport to the surface, (ii) reactants adsorption on the surface, (iii) surface reactions, (iv)

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Integrated Silicon Photodetectors

Zimmermann

2004

Silicon Optoelectronic Integrated Circuits

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U-groove isolation technique for high speed bipolar VLSI's

Cited by 23 publications

References 1 publication

Structural Effects on a Submicron Trench Process

Structural Effects on a Submicron Trench Process

Redeposition during Deep Trench Etching

Integrated Silicon Photodetectors

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