Type–II superlattices base visible/extended short–wavelength infrared photodetectors with a bandstructure–engineered photo–generated carrier extractor

Abstract

Visible/extended short–wavelength infrared photodetectors with a bandstructure–engineered photo–generated carrier extractor based on type–II InAs/AlSb/GaSb superlattices have been demonstrated. The photodetectors are designed to have a 100% cut-off wavelength of ~2.4 μm at 300K, with sensitivity down to visible wavelengths. The photodetectors exhibit room–temperature (300K) peak responsivity of 0.6 A/W at ~1.7 μm, corresponding to a quantum efficiency of 43% at zero bias under front–side illumination, without any anti–reflection coating where the visible cut−on wavelength of the devices is <0.5 µm. With a dark current density of 5.3 × 10−4 A/cm2 under −20 mV applied bias at 300K, the photodetectors exhibit a specific detectivity of 4.72 × 1010 cm·Hz1/2/W. At 150K, the photodetectors exhibit a dark current density of 1.8 × 10−10 A/cm2 and a quantum efficiency of 40%, resulting in a detectivity of 5.56 × 1013 cm·Hz1/2/W.

Status of multi-wafer production MBE capabilities for extended SWIR III-V epi materials for IR detection

“…Several III-V-based approaches have been demonstrated to address the extended SWIR band [7,8] and provide potential solutions which could exploit the manufacturability and uniformity advantages of molecular beam epitaxy (MBE) volume manufacturing. In this report, the authors present results on two III-V approaches for extended SWIR detection, both of which result in lattice matched material to commercially available III-V substrates and produced on multi-wafer production systems.…”

Monolithic integration of a 10 μm cut-off wavelength InAs/GaSb type-II superlattice diode on GaAs platform

“…The type-II superlattice (T2SL), a periodic stack of two or more semiconducting layers theorized by Esaki et al 27 , is considered one of the most promising III-V based alternatives to MCT due to suppressed Auger recombination, reduced tunneling currents, and impressive advances in bandgap engineering 2 , 12 . Furthermore, the bandgap tuneability of the T2SL from around 3.5–30 μm, achieved by tuning the thicknesses of the constituent layers, has enabled the development of a variety of devices including photodetectors 28 – 30 , LEDs 31 , 32 , lasers 33 , 34 , and phototransistors 35 , 36 . The IMF array has already proven to be a beneficial innovation for T2SL IR devices, bringing notable advantages such as larger wafers, semi-insulating properties 15 , increased quantum efficiency 13 , 14 , and the opportunity for obtaining optically immersed detectors 37 – 41 , in addition to reduced costs.…”

Improving of Sensitivity of PbS Quantum Dot Based SWIR Photodetector Using P3HT

“…Shortwave infrared (SWIR: 1.0–2.5 μm) photodetectors are widely used in various fields such as telecom, temperature measurement, remote sensing, and spectroscopy [ 1 , 2 , 3 , 4 ]. In general, compound semiconductors, such as InGaAs, InAs, are applied to the fabrication of SWIR photodetectors.…”