Type-II Superlattice Mid-Wavelength Infrared Focal Plane Arrays for CubeSat Hyperspectral Imaging

Ting, David Z.; Rafol, Sir B.; Khoshakhlagh, Arezou; Keo, Sam A.; Soibel, Alexander; Fisher, Anita M.; Pepper, Brian; Hill, Cory J.; Gunapala, Sarath D.; Pagano, Thomas S.

doi:10.1109/lpt.2022.3156048

Cited by 3 publications

(2 citation statements)

References 19 publications

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“…The electric field being confined in the BL, the generation-recombination (G-R) current is suppressed in the absorption region and the dark-current of such a structure, when properly designed, is thus diffusion-limited whatever the temperature. The electrical performances of XBn detetctors are therefore improved compared to the usual pin photodiodes and for Ga-free InAs/InAsSb type-2 superlattice (T2SL) detector and focal plane arrays (FPAs), temperature operation over 120 K is reached for the full MWIR domain [3][4][5][6][7] . However, much work still needs to be done to enhance the electrical and electrooptical performance of the devices.…”

Section: Introductionmentioning

confidence: 99%

Performance analysis of Ga-free T2SL infrared barrier detector

Christol,

Bouschet,

Tornay

et al. 2023

Infrared Technology and Applications XLIX

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Ga-free InAs/InAsSb T2SL XBn detector is now a reliable candidate for high-performance focal plane arrays in the MWIR (3-5μm) domain. However, this T2SL is a very anisotropic quantum structure having a type-IIb band offset alignment where electrons are rather delocalized all over the structure while holes are strongly confined in deep InAsSb quantum well. This configuration could penalize the absorption and the hole minority carrier transport but MWIR detector device without anti reflection coating shows quantum efficiency higher than 50%. Considering results of specific measurements and band structure calculation, possible carrier transport scenario is presented to explain such performance.

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Section: Introductionmentioning

confidence: 99%

Performance analysis of Ga-free T2SL infrared barrier detector

Christol,

Bouschet,

Tornay

et al. 2023

Infrared Technology and Applications XLIX

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“…Combined with a unipolar barrier structure design called XBn [1], a Ga-free InAs/ InAsSb type-II superlattice (T2SL) is currently under development for a high-performance midwave infrared (MWIR, 3-5 µm) quantum detector suitable for military, medical and spatial applications [2]. Ten years ago, InAs/InAsSb T2SL was considered as a promising material [3,4] for MWIR detection with a minority carrier lifetime over 5 µs at 77 K [5].…”

Section: Introductionmentioning

confidence: 99%

Temperature Dependence Study of Electrical and Electro-Optical Performances of Midwave Infrared Ga-Free T2SL Barrier Photodetector

et al. 2022

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In this paper, we report on temperature dependence performances of a midwave infrared (MWIR) Ga-free InAs/InAsSb type-II superlattice (T2SL) barrier (XBn) photodetector grown by molecular beam epitaxy on n-type GaSb substrate. The T2SL structure, with a 3 µm thick active region, was processed in a mesa device in order to perform dark current measurements and spectral photoresponse as a function of temperature. Analyses of these temperature dependence characterizations help us to improve the design of Ga-free T2SL MWIR XBn detectors.

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