Temperature Dependence Study of Electrical and Electro-Optical Performances of Midwave Infrared Ga-Free T2SL Barrier Photodetector

Bouschet, Maxime; Arounassalame, Vignesh; Ramiandrasoa, Anthony; Ribet-Mohamed, I.; Pérez, Jean-Philippe; Péré‐Laperne, Nicolas; Christol, Philippe

doi:10.3390/app122010358

Cited by 3 publications

(1 citation statement)

References 36 publications

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“…If the thickness of the absorber layer is too thick, some photocarriers will recombine before being collected, affecting the collection of photocarriers, and the quantum efficiency will actually decrease. At this point, it is necessary to increase the appropriate bias voltage to increase the width of the depletion region to promote sufficient collection of minority carriers [15] .…”

Section: Quantum Efficiencymentioning

confidence: 99%

Dark current analysis of pπMn T2SL mid-wavelength infrared detector structure

Zhao,

Han,

Guan

et al. 2023

Third International Computing Imaging Conference (CITA 2023)

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InAs/GaSb Type II Superlattice (T2SL) has become a highly competitive material for Infrared (IR) detector. We designed a pπMn mid-wavelength infrared detector based on the InAs/GaSb T2SL materials and studied the influence of the detector structural parameters on the dark current density magnitude and the Quantum Efficiency (QE) from the theoretical simulation level. Through the simulation of the detector material and structure, the dark current density characteristics at various doping concentrations, the dark current density characteristics and QE at different superlattice material thicknesses, and the temperature dependence of the dark current level are calculated. The M-structure barrier is inserted in between the π and n layers of the T2SL infrared detector structure, and the overall dark current level can be effectively reduced. Under the condition of 77 K, according to the final simulation data results, the dark current density can achieve 9.46×10-8 A/cm2, and the peak QE can achieve 34.3%.

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Section: Quantum Efficiencymentioning

confidence: 99%

Dark current analysis of pπMn T2SL mid-wavelength infrared detector structure

Zhao,

Han,

Guan

et al. 2023

Third International Computing Imaging Conference (CITA 2023)

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Comparison of type II superlattice InAs/InAsSb barrier detectors operating in the mid-wave infrared range

Kopytko,

Madejczyk,

Murawski

et al. 2024

Journal of Applied Physics

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Four types of barrier detectors based on a type II InAs/InAsSb superlattice with a wide-gap barrier made of a solid AlInAsSb lattice matched to the GaSb buffer were compared. The tested detectors differed in the type of doping of the active layer and the level and type of doping of the contact layer at the barrier. The epitaxial layers were deposited on GaAs (100) substrates using the molecular beam epitaxy method. The spectral and current–voltage characteristics of the analyzed detectors were compared. The highest current responsivities were observed in the structure with a p-type absorber (p+BpN+). Detectors with an n-type absorber (p+Bnn+, n+Bnn+, and nBnn+) show an increase in the current responsivity with an increase in the reverse bias voltage due to the reduction in the undesirable barrier in the valence band. Arrhenius characteristics for the dark current show that only in nBnn+ detectors, it was possible to limit the generation–recombination current. These detectors at 150 K were characterized by the highest normalized detectivity of approximately 3 × 1011 cm · Hz1/2/W. The obtained results were compared with literature data, showing that the parameters of type II superlattice photodetectors are close to those of HgCdTe photodiodes according to the “Rule 07” and “Rule 22” principles.

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In situ cryogenic electro-optical and radiation hardness characterization of a T2SL MWIR sensor for space imaging

Dazzazi,

Ivory,

Prest

et al. 2024

X-Ray, Optical, and Infrared Detectors for Astronomy XI

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A Medium Wave Infrared (MWIR) image sensor developed by Teledyne e2v UK is studied for potential use in the International Mars Ice Mapper mission (I-MIM). Featuring a 640×512 array with a 15 µm pixel pitch and a cutoff wavelength of 5 µm, the sensor employs Ga-free InAsSb/InAs Type 2 Super Lattice (T2SL) and bariode (XBn) technologies. The study focuses on characterizing the sensor's quantum efficiency (QE), dark current (DC), and radiation hardness under cryogenic conditions down to 130 K. A system allowing in situ measurements pre-and post-irradiation was developed. The first QE measurements were conducted before and after irradiation with a 10 MeV proton (p + ) equivalent end-of-life fluence of 5×10 9 p + cm −2 and a double end-of-life fluence of 1×10 10 p + cm −2 into the absorber layer, while the device was kept cryogenically cooled.

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Temperature Dependence Study of Electrical and Electro-Optical Performances of Midwave Infrared Ga-Free T2SL Barrier Photodetector

Cited by 3 publications

References 36 publications

Dark current analysis of pπMn T2SL mid-wavelength infrared detector structure

Dark current analysis of pπMn T2SL mid-wavelength infrared detector structure

Comparison of type II superlattice InAs/InAsSb barrier detectors operating in the mid-wave infrared range

In situ cryogenic electro-optical and radiation hardness characterization of a T2SL MWIR sensor for space imaging

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