2022
DOI: 10.1039/d2ya00008c
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Type-II BiVO4/Ni3(hexahydroxytriphenylene)2 heterojunction photoanodes for effective photoelectrochemical reaction

Abstract: Semiconducting M3(hexahydroxytriphenylene)2 (M = Ni, Co, Cu; hexahydroxytriphenylene (HHTP)) was uniformly coated onto BiVO4 thin films via a facile solvothermal process, and the photoelectrochemical performance of the BiVO4/M3(HHTP)2 photoanodes was...

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Cited by 6 publications
(9 citation statements)
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References 39 publications
(51 reference statements)
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“…The supreme performance of the ZnO/Ni-CAT-based PD can be further explained by the energy band diagrams, which are illustrated in Figure . The work functions (WFs, ϕ) of n-type ZnO, p-type Ni-CAT, Au electrode, and Ag electrode are 4.0, 5.0, 5.1, and 4.26 eV, respectively. , The band gap of n-type ZnO and p-type Ni-CAT are 3.31 and 2.68 eV, respectively. , (Figure a,c). For ZnO/Ni-CAT-0 based PDs, the ZnO can absorb photogenerated holes due to the BEF ( V bi ) generated at the Schottky junction of the Au/ZnO and Ag/ZnO interface.…”
Section: Resultsmentioning
confidence: 96%
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“…The supreme performance of the ZnO/Ni-CAT-based PD can be further explained by the energy band diagrams, which are illustrated in Figure . The work functions (WFs, ϕ) of n-type ZnO, p-type Ni-CAT, Au electrode, and Ag electrode are 4.0, 5.0, 5.1, and 4.26 eV, respectively. , The band gap of n-type ZnO and p-type Ni-CAT are 3.31 and 2.68 eV, respectively. , (Figure a,c). For ZnO/Ni-CAT-0 based PDs, the ZnO can absorb photogenerated holes due to the BEF ( V bi ) generated at the Schottky junction of the Au/ZnO and Ag/ZnO interface.…”
Section: Resultsmentioning
confidence: 96%
“…The work functions (WFs, ϕ) of ntype ZnO, p-type Ni-CAT, Au electrode, and Ag electrode are 4.0, 5.0, 5.1, and 4.26 eV, respectively. 22,39 The band gap of ntype ZnO and p-type Ni-CAT are 3.31 and 2.68 eV, respectively. 22,39 (Figure 5a,c).…”
Section: ■ Experimental Sectionmentioning
confidence: 99%
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