Type-II and type-I interband cascade lasers

Low threshold 3 μm interband cascade “W” laser

“…[2][3][4] Detailed modeling simulations 5,6 predict that the multi-stage ICLs should uniquely combine low threshold currents with high operating temperatures and high maximum output powers per facet at wavelengths in the 2.5 to 7 µm range. Similar to the intersubband-based quantum cascade laser (QCL), 7,8 electrons can be recycled and additional photons generated at each step of the staircase-like structure.…”

Silicon intersubband lasers

“…We begin with a detailed analysis of an 18 µm p-i-p cryogenic quantum cascade laser in the Si 0.75 Ge 0.25 /Si and Si 0.63 Ge 0.33 C 0.04 /Si heterosystems. We conclude with a discussion of four issues: (1) limitations of the quantum cascade at near-infrared wavelengths, (2) alternative noncascade lasers for the near infrared, (3) surface-emitting laser techniques, and (4) silicon-on-insulator (SOI) platforms for edge-emitting, verticalcavity, and microcavity lasers. Our goal is to provide a practical framework for the experimental demonstration of such lasers before the year 2000.…”

Multistage infrared emitters based on InAsSb strained layers grown by metal-organic chemical vapor deposition

“…We are exploring the growth by metal-organic chemical vapor deposition (MOCVD) of novel, multistage (or "cascaded") active regions in InAsSb-based devices, to further improve laser and LED performance [4]. Multistage, mid-infrared gain regions have been proposed for several material systems [1][2][3][4][5][6][7]. Ideally, a laser with an N-stage active region could produce N photons for each injected carrier.…”

“…Gain regions with multiple electron-hole recombination stages have been proposed for Sb-based lasers [1, 5,6]. Recently, cascaded lasers with type II InAs/GaInSb active regions have been demonstrated [8].…”

“…Unlike previous cascaded lasers and LEDs [5][6][7][8][9] our device was grown by MOCVD [4]. Our devices are among the most complex structures ever grown by MOCVD, and it can be difilcuh to alternate Al, In, Ga, P, As, or Sb bearing materials while maintaining sharp interfaces and managing chemical carry-over into other layers.…”