Low threshold 3 μm interband cascade “W” laser

Felix, C. L.; Bewley, W. W.; Aifer, E. H.; Vurgaftman, I.; Meyer, J. R.; Lin, Chi‐Wei; Zhang, D.; Murry, S. J.; Yang, Rui Q.; Pei, Shin Shem

doi:10.1007/s11664-998-0192-2

Cited by 18 publications

(5 citation statements)

References 16 publications

(12 reference statements)

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“…Despite having 20 or more active stages, the external differential quantum efficiencies (EDQEs) per stage were low, e.g., only 6-7.5% at T = 100 K in Refs. [30] and [31]. These two working devices were the first to feature the "W" ICL configuration.…”

Section: Early Experimental Realizationsmentioning

confidence: 99%

The Interband Cascade Laser

et al. 2020

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We review the history, development, design principles, experimental operating characteristics, and specialized architectures of interband cascade lasers for the mid-wave infrared spectral region. We discuss the present understanding of the mechanisms limiting the ICL performance and provide a perspective on the potential for future improvements. Such device properties as the threshold current and power densities, continuous-wave output power, and wall-plug efficiency are compared with those of the quantum cascade laser. Newer device classes such as ICL frequency combs, interband cascade vertical-cavity surface-emitting lasers, interband cascade LEDs, interband cascade detectors, and integrated ICLs are reviewed for the first time.

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Section: Early Experimental Realizationsmentioning

confidence: 99%

The Interband Cascade Laser

et al. 2020

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“…For a comparative study, four ICL wafers (EB7541, EB7547, EB7523 and EB7539) were grown by MBE on InAs substrates, all of which incorporated the advanced waveguide, and two of which (EB7523 and EB7539) included the InA 0.5 P 0.5 barriers in the QW active region. For EB7541 (EB7547), a regular W-QW structure [21][22][23] Here the InAs layer thicknesses in the latter wafers were reduced by about 30% in the first InAs QW and about 35% in the second InAs QW compared to the devices which did not include InA 0.5 P 0.5 barriers. Based on a two-band k•p model [24,25], the estimated wavefunction overlaps for EB7541 and EB7547 were 16.7% and 15.6%, respectively.…”

Section: Structure Design Of Inas-based Iclsmentioning

confidence: 99%

Enhanced performance of InAs-based interband cascade lasers emitting between 10–13 µm

Massengale¹,

Shen²,

Yang³

et al. 2022

Semicond. Sci. Technol.

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Interband cascade lasers (ICLs) based on the type-II quantum well (QW) active region have attracted much attention for a range of practical applications in the mid-infrared (MIR) due, in part, to their low power consumption. However, extending the operating wavelength of these ICLs into the long-wave infrared (LWIR) region presents several challenges including the reduced thermal conductivity of the optical cladding layers and the diminished wavefunction overlap in the type-II QW. One solution to alleviate the former concern is to use InAs-based ICLs. To solve the latter problem, InAs0.5P0.5 barriers are introduced in the active region, which lowers the electronic energy level and allows for the InAs well width to be reduced at longer emission wavelengths. Here the advancement of long wavelength ICLs, made from four new InAs-based ICL wafers grown by molecular beam epitaxy (MBE), is reported. These ICLs lased in the wavelength range from 10 to 13 µm and showed significantly improved performance compared with previous ICLs, including the first demonstration of broad-area devices operating in continuous wave (cw) mode beyond 12 µm. These ICLs exhibited substantially increased output powers with reduced threshold voltages (Vth) and current densities (Jth). They operated at temperatures up to 40 K higher than previous ICLs at similar wavelengths.

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“…We are exploring the growth by metal-organic chemical vapor deposition (MOCVD) of novel, multistage (or "cascaded") active regions in InAsSb-based devices, to further improve laser and LED performance [4]. Multistage, mid-infrared gain regions have been proposed for several material systems [1][2][3][4][5][6][7]. Ideally, a laser with an N-stage active region could produce N photons for each injected carrier.…”

Section: Introducttonmentioning

confidence: 99%

“…Gain regions with multiple electron-hole recombination stages have been proposed for Sb-based lasers [1, 5,6]. Recently, cascaded lasers with type II InAs/GaInSb active regions have been demonstrated [8].…”

Section: Introducttonmentioning

confidence: 99%

See 1 more Smart Citation

Multistage infrared emitters based on InAsSb strained layers grown by metal-organic chemical vapor deposition

Biefeld

Allerman²,

Kurtz³

et al.

1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)

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-We report on the metal-organic chemical vafir deposition (MOCVD) of mid-infrared InAaSb multistage emitters using a hlgb speed rotating dkk reactor. The devices contain AIAsSb ctaddi~and almined InAaSb active regions. These emitters have multistage, type~InAsSb/inAaP quantum well active regions. A semi-metal GaAaSbfh4.v layer acts as an internal electron source for the multistage injection lasers and AIAsSb is tbe electron confinement layer. These structures are #e first MOCVD multistage devices. Broadband LED's produced 2 mW average power at 3.7 gm and 80 K and 0.1 mW at 4.3 ym and 300K. A multistage, 3.8-3.9 pm laser structure operated up to T=180 K. At 80 & peak-power> 100 mW/facet and a bigb slope-efficiency (48%) were observed in these gain guided lasers.

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Low threshold 3 μm interband cascade “W” laser

Cited by 18 publications

References 16 publications

The Interband Cascade Laser

The Interband Cascade Laser

Enhanced performance of InAs-based interband cascade lasers emitting between 10–13 µm

Multistage infrared emitters based on InAsSb strained layers grown by metal-organic chemical vapor deposition

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