Type-I van der Waals heterostructure formed by MoS<sub>2</sub> and ReS<sub>2</sub> monolayers

Bellus, Matthew Z.; Li, Ming; Lane, Samuel D.; Ceballos, Frank; Cui, Qiannan; Zeng, Xiao Cheng; Zhao, Hui

doi:10.1039/c6nh00144k

Cited by 187 publications

(160 citation statements)

References 41 publications

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“…Various HJs have thus far been fabri cated by combining desirable 2D layered materials. [6,[8][9][10][11] Atomically thin p-n HJs have been fabricated by stacking mono layers (1L) of MoS 2 and WSe 2 (MoS 2 / WSe 2 ); the resultant HJs have been used to demonstrate various intriguing opto electronic applications of photovoltaic effect, electrically driven light emission, and photodetection. [6,8,9] Moreover, p-n junctions have also been achieved by elec trostatic control of the charge carrier type in different regions of the devices; how ever, they are usually limited on the typical ambipolar 2D materials (e.g., WSe 2 ).…”

Section: Doi: 101002/smll201704559mentioning

confidence: 99%

“…Various HJs have thus far been fabricated by combining desirable 2D layered materials . Atomically thin p–n HJs have been fabricated by stacking monolayers (1L) of MoS 2 and WSe 2 (MoS 2 /WSe 2 ); the resultant HJs have been used to demonstrate various intriguing optoelectronic applications of photovoltaic effect, electrically driven light emission, and photodetection .…”

Section: Introductionmentioning

confidence: 99%

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Carrier Transport and Photoresponse in GeSe/MoS₂ Heterojunction p–n Diodes

Tan

Wang

Zhang

et al. 2018

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Simple stacking of thin van der Waals 2D materials with different physical properties enables one to create heterojunctions (HJs) with novel functionalities and new potential applications. Here, a 2D material p-n HJ of GeSe/MoS is fabricated and its vertical and horizontal carrier transport and photoresponse properties are studied. Substantial rectification with a very high contrast (>10 ) through the potential barrier in the vertical-direction tunneling of HJs is observed. The negative differential transconductance with high peak-to-valley ratio (>10 ) due to the series resistance change of GeSe, MoS , and HJs at different gate voltages is observed. Moreover, strong and broad-band photoresponse via the photoconductive effect are also demonstrated. The explored multifunctional properties of the GeSe/MoS HJs are expected to be important for understanding the carrier transport and photoresponse of 2D-material HJs for achieving their use in various new applications in the electronics and optoelectronics fields.

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Section: Doi: 101002/smll201704559mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Carrier Transport and Photoresponse in GeSe/MoS₂ Heterojunction p–n Diodes

Tan

Wang

Zhang

et al. 2018

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“…This will allow us to build atomically thin O–I interfaces with well‐controlled molecular arrangements on the interface and explore how the molecular aggregations would affect the light–matter interactions in the hybrid system. Furthermore, ultrathin organic molecular crystals have a clear interface and high excitonic densities with high binding energies, which can comprehensively interact with excitonic states in the inorganic 2D materials and can lead to various applications for optical devices such as light‐emitting devices …”

mentioning

confidence: 99%

Efficient and Layer‐Dependent Exciton Pumping across Atomically Thin Organic–Inorganic Type‐I Heterostructures

et al. 2018

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The fundamental light-matter interactions in monolayer transition metal dichalcogenides might be significantly engineered by hybridization with their organic counterparts, enabling intriguing optoelectronic applications. Here, atomically thin organic-inorganic (O-I) heterostructures, comprising monolayer MoSe and mono-/few-layer single-crystal pentacene samples, are fabricated. These heterostructures show type-I band alignments, allowing efficient and layer-dependent exciton pumping across the O-I interfaces. The interfacial exciton pumping has much higher efficiency (>86 times) than the photoexcitation process in MoSe , although the pentacene layer has much lower optical absorption than MoSe . This highly enhanced pumping efficiency is attributed to the high quantum yield in pentacene and the ultrafast energy transfer between the O-I interface. Furthermore, those organic counterparts significantly modulate the bindings of charged excitons in monolayer MoSe via their precise dielectric environment engineering. The results open new avenues for exploring fundamental phenomena and novel optoelectronic applications using atomically thin O-I heterostructures.

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“…2D heterojunctions can be classified into three typical band alignments (Figure f), i.e., type I with a straddling gap, type II with a staggered gap, and type III with a broken gap. Type‐I band alignment results in both electrons and holes accumulating on the same side, with a relatively narrow bandgap . This characteristic can be used to build quantum wells and applied in light‐emitting devices and semiconducting lasers.…”

Section: Basic Characteristics Of 2d Devicesmentioning

confidence: 99%

Versatile Crystal Structures and (Opto)electronic Applications of the 2D Metal Mono‐, Di‐, and Tri‐Chalcogenide Nanosheets

Cui

Zhou

et al. 2019

Adv Funct Materials

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Emerging 2D metal chalcogenides present excellent performance for electronic and optoelectronic applications. In contrast to graphene and other 2D materials, 2D metal chalcogenides possess intrinsic bandgaps, versatile band structures, and superior atmospheric stability. The many categories of 2D metal chalcogenides ensure that they can be applied to various practical scenarios. 2D metal monochalcogenides, dichalcogenides, and trichalcogenides are the three main categories of these materials. They have distinct crystal structures resulting in different characteristics. Some basic device characteristics, such as the charge carrier characteristics, scattering mechanisms, interfacial contacts, and band alignments of heterojunctions, are vital factors for practical device applications that ensure that the desired properties can be achieved. Various electronic, optoelectronic, and photonic applications based on 2D metal chalcogenides have been extensively investigated. 2D metal chalcogenides are considered as competitive candidates for future electronic and optoelectronic applications.is advantageous for reducing the destruction from the surrounding environment during processing and storage and can effectively prolong the practical lifetime of materials. 2D metal chalcogenides have been extensively investigated for various applications, including electronics, optoelectronics, valleytronics, spintronics, superconductivity, thermoelectricity, and electrochemistry. [1b,5,9] 2D metal chalcogenides possess rich band structures with various bandgaps, which are a pivotal issue of modern electronic and optoelectronic applications. Some 2D metal chalcogenides with special quantum characteristics provide a versatile platform for investigating novel electronic and optoelectronic applications, such as the valleytronics applications of group VIB dichalcogenides. [10] In this review, we provide a comprehensive introduction to electronic, optoelectronic, and photonic applications for all 2D metal chalcogenides, including 2D metal mono-, di-, and tri-chalcogenides. Their different characteristics arising from the diverse crystal structures determine the potential applications in different fields. Some basic device characteristics, such as the charge carrier characteristics, scattering mechanisms, interfacial contacts, and band alignments of heterojunctions, are vital factors for optimizing the performance in practical applications. A bottomto-top overview based on recent studies of 2D metal chalcogenides, from the crystal structures and device characteristics to applications, is provided in the following sections.

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Type-I van der Waals heterostructure formed by MoS₂ and ReS₂ monolayers

Abstract: Monolayers of ReS2 and MoS2 form a type-I van der Waals heterostructure with both the electrons and the holes confined in the ReS2 layer.

Cited by 187 publications

References 41 publications

Carrier Transport and Photoresponse in GeSe/MoS₂ Heterojunction p–n Diodes

Carrier Transport and Photoresponse in GeSe/MoS₂ Heterojunction p–n Diodes

Efficient and Layer‐Dependent Exciton Pumping across Atomically Thin Organic–Inorganic Type‐I Heterostructures

Versatile Crystal Structures and (Opto)electronic Applications of the 2D Metal Mono‐, Di‐, and Tri‐Chalcogenide Nanosheets

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Type-I van der Waals heterostructure formed by MoS2 and ReS2 monolayers

Abstract: Monolayers of ReS2 and MoS2 form a type-I van der Waals heterostructure with both the electrons and the holes confined in the ReS2 layer.

Cited by 187 publications

References 41 publications

Carrier Transport and Photoresponse in GeSe/MoS2 Heterojunction p–n Diodes

Carrier Transport and Photoresponse in GeSe/MoS2 Heterojunction p–n Diodes

Efficient and Layer‐Dependent Exciton Pumping across Atomically Thin Organic–Inorganic Type‐I Heterostructures

Versatile Crystal Structures and (Opto)electronic Applications of the 2D Metal Mono‐, Di‐, and Tri‐Chalcogenide Nanosheets

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Type-I van der Waals heterostructure formed by MoS₂ and ReS₂ monolayers

Carrier Transport and Photoresponse in GeSe/MoS₂ Heterojunction p–n Diodes

Carrier Transport and Photoresponse in GeSe/MoS₂ Heterojunction p–n Diodes