Type-I intermittency in semiconductor breakdown - experimental consequences of bifurcations from a toroidal attractor

Self-sustained current oscillations in high-purity n-type GaAs epitaxial layers were investigated for intermittent behavior in the control parameter plane constituted by the constant bias voltage and an external magnetic field. Intermittent windows were observed in a sequence of Hopf bifurcations. guasiperiodic and frequency-locked oscillations were found to follow an intermittency type-II or type-III route to chaos in the Pomeau-Manneville classi6cation scheme. Additionally, intermittent bursts due to noise were observed at voltages well below the threshold of bifurcation.

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Intermittent breakdown of current-oscillation tori inn-type GaAs epitaxial layers

Margull

Spangler

Prettl

1994

Phys. Rev. B

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Type-I intermittency in semiconductor breakdown - experimental consequences of bifurcations from a toroidal attractor

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Intermittent breakdown of current-oscillation tori inn-type GaAs epitaxial layers

Intermittent breakdown of current-oscillation tori inn-type GaAs epitaxial layers

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