1994
DOI: 10.1103/physrevb.50.14166
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Intermittent breakdown of current-oscillation tori inn-type GaAs epitaxial layers

Abstract: Self-sustained current oscillations in high-purity n-type GaAs epitaxial layers were investigated for intermittent behavior in the control parameter plane constituted by the constant bias voltage and an external magnetic field. Intermittent windows were observed in a sequence of Hopf bifurcations. guasiperiodic and frequency-locked oscillations were found to follow an intermittency type-II or type-III route to chaos in the Pomeau-Manneville classi6cation scheme. Additionally, intermittent bursts due to noise w… Show more

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