Type controlled thermoelectric properties in tin selenide fabricated using room-temperature synthesis and hot pressing

Yang, Zong-Ren; Lin, Fei‐Hung; Hung, Peng-Chun; Liu, Chia‐Jyi

doi:10.1016/j.jallcom.2021.161639

Cited by 1 publication

(1 citation statement)

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“…The progress of the conventional heavy-atom-doped semiconductors, such as Bi 2 Te 3 , PbTe, Si–Ge, and Te–Ag–Ge–Sb, has resulted in increased thermoelectric figure of merit (ZT), which makes the technology more efficient at producing power [ 2 ]. To overcome the deficit of rare elements such as tellurium and avoid hazardous elements such as lead, alternative materials, such as bismuth sulfide (Bi 2 S 3 ) [ 3 ], tin selenide (SnSe) [ 4 ], and magnesium-silicon-based new materials [ 5 ], have attracted much attention, and higher performance reports emerge regularly. However, the properties of bulk TE materials are determined primarily by composition and microstructure, which limits the usage of thermoelectric energy conversion to niche applications.…”

Section: Introductionmentioning

confidence: 99%

Characterization of Magnetron Sputtered BiTe-Based Thermoelectric Thin Films

Zhang

Gurtaran

et al. 2023

Nanomaterials

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Thermoelectric (TE) technology attracts much attention due to the fact it can convert thermal energy into electricity and vice versa. Thin-film TE materials can be synthesized on different kinds of substrates, which offer the possibility of the control of microstructure and composition to higher TE power, as well as the development of novel TE devices meeting flexible and miniature requirements. In this work, we use magnetron sputtering to deposit N-type and P-type BiTe-based thin films on silicon, glass, and Kapton HN polyimide foil. Their morphology, microstructure, and phase constituents are studied by SEM/EDX, XRD, and TEM. The electrical conductivity, thermal conductivity, and Seebeck coefficient of the thin film are measured by a special in-plane advanced test system. The output of electrical power (open-circuit voltage and electric current) of the thin film is measured by an in-house apparatus at different temperature gradient. The impact of deposition parameters and the thickness, width, and length of the thin film on the power output are also investigated for optimizing the thin-film flexible TE device to harvest thermal energy.

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