Type conductivity conversion in As-, Sb-doped p-CdxHg1−xTe under ion beam milling

Mechanisms of conductivity conversion in extrinsically and intrinsically doped p-HgCdTe solid solutions under low energy ion beam milling

“…Consequently, residual uncompensated donors prevail and convert the material into n-type. As we reported in [5,6], the reason of the conversion in As or Sb doped p-Hg 1−x Cd x Te is the ability of mercury interstitial atoms to create stable donor complexes with atoms of VB-group elements: Hg I − A Te (A: As or Sb).…”

“…We use the method which is similar to that we have successfully applied to investigate IBM treated vacancy doped [2] and As (Sb) doped [5,6] p-Hg 1−x Cd x Te. The internal electric field induced by diffusing charged defects and its influence upon the conversion depth in Hg 1−x Cd x Te is also addressed.…”

Comparison of electrical properties of HgCdTe subsurface layers formed by low energy ion beam milling or anodic oxidation

“…A center of this kind (A X ) has one unpaired electron, and if there is an interstitial Hg atom with two unpaired valence electrons in the nearby area, these two defects can form a stable donor complex Hg for H c > 0.6 eV, where H c was estimated as ≈1 ± 0.1 eV in HgCdTe : As. [4] This value is large enough to make the consideration of complex formation necessary. For HgCdTe : Sb, we determined H c ≈ 0.6-0.9 eV.…”

“…The as-grown epitaxial layers were in situ annealed at 593 K at Hg-saturated conditions to remove the vacancies. [4,5] The ion beam etching system (EIKO, Japan) with Ar + ions was used to perform IM under the following conditions: ion energy E = 500 eV; ion current density j = 0.1-0.35 mA/cm 2 ; Figure 1. The generalized picture of intrinsic point defects and impurities in the HgCdTe lattice and their interaction with the mercury interstitials Hgi.…”

Time relaxation of point defects in p- and n-(HgCd)Te after ion milling

“…The theoretical model of the relaxation based on the capture of Hg I on defects inside the sample during DE and their successive liberation was proposed. 3,15,17 The nature and effect of such a layer to the n-type formation has not been thoroughly studied yet. 8.…”