Time relaxation of point defects in p- and n-(HgCd)Te after ion milling

Belas, E.; Bogoboyashchyy, V. V.; Grill, R.; Іжнін, І. І.; Власов, А. П.; Yudenkov, V. A.

doi:10.1007/s11664-003-0055-9

Cited by 38 publications

(18 citation statements)

References 15 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…This speaks of extreme purity of these samples, which is below the typical level of residual donor doping in LPE HgCdTe [9]. The obtained values can be compared only to these in intentionally doped bulk HgCdTe crystals [10], where low residual concentration was achieved by the introduction of Se. The electron mobility in the LPE samples measured af− ter IM and relaxation approached 200 000 cm 2 V -1 s -1 , which also confirms very low residual donor concentration.…”

Section: Discussionmentioning

confidence: 99%

Ion milling-assisted study of defect structure of HgCdTe films grown by liquid phase epitaxy

Іжнін¹,

Denisov

Смирнова

et al. 2010

Opto-Electron. Rev.

View full text Add to dashboard Cite

Section: Discussionmentioning

confidence: 99%

Ion milling-assisted study of defect structure of HgCdTe films grown by liquid phase epitaxy

Іжнін¹,

Denisov

Смирнова

et al. 2010

Opto-Electron. Rev.

View full text Add to dashboard Cite

“…This is used for assessing the background donor doping in MCT [10,11]. The damaged n + layer is believed not to be a source of interstitial mercury, and does not affect relax− ation process in the bulk n layer [17,18], so it was kept on the surface of the samples throughout the relaxation measurements described in this paper. Figure 3 shows R H (B) dependence for sample 1 mea− sured before and after the milling, as well as during the relaxation.…”

Section: Electrical Properties Of Ion-milled Filmsmentioning

confidence: 99%

Electrical properties of HgCdTe films grown by MOCVD and doped with as

Іжнін¹,

Savytskyy²,

Fitsych

et al. 2013

Opto-Electronics Review

View full text Add to dashboard Cite

Electrical properties of HgCdTe films grown by metal-organic chemical vapour deposition (MOCVD) on GaAs substrates and doped with the As acceptor during the growth were studied. Discrete mobility spectrum analysis was used to extract the parameters of the as-grown films and films after ion milling and during prolonged relaxation of milling-induced defects. The measurements revealed significant compensation of the as-grown MOCVD HgCdTe with As on Te sites being the main defect, residual donor concentration of the order of (2–5)×1015 cm−3, and the presence of some unidentified defects.

show abstract

“…According to 19,20 the relaxation of electrical parameters in IM formed p-n structures begins immediately after finishing IM. This confirms the results in Fig.4 for LPE sample of the same technological origin as mentioned above.…”

Section: Long Time Stabilitymentioning

confidence: 99%

“…Different character of relaxation in IM converted n-layers with or without damage n + -layer also was pointed. The relaxation in the main part of the converted n-layer under IM is presumed to be caused by the dissociation of donor complexes and centers generated there 19,20 . This conclusion was experimentally confirmed through observing the relaxation kinetics of the IM-converted n-layer in As-doped 20 and Cu, Ag or Au doped 21 p-Cd x Hg 1-x Te samples.…”

Section: Introductionmentioning

confidence: 99%

Regularities of the Cd x Hg 1-x Te p-n junction formation by ion milling

Іжнін¹,

Bogoboyashchyy

Sizov

2005

SPIE Proceedings

View full text Add to dashboard Cite

The main features of p-n conductivity type conversion by ion milling in vacancy-doped p-Cd x Hg 1-x Te are considered. A diffusion model of the Hg interstitials source formation in MCT crystals under IM was proved through investigation of conversion depth dependence on composition. The model explains, both quantitatively and qualitatively, conversion depth dependencies on the IM temperature and the alloy composition. The most important factor, which defines these dependencies, is an electric field located at the interface between the p-type defect layer and the n-type converted layer and in the grad band region. It was demonstrated that main features of carrier distribution over the p-n structure depth remained after 10 years samples storage. The relaxation of electrical properties of the n-layer main part after IM was explained by dissociation of donor complexes and centers formed by Hg interstitials with residual I and V group acceptor impurities. It was also demonstrated that IM results in forming a complex damaged n + -layer including several sub-layers with different nature of electron conductivity. An analysis of how electrons concentration relax in the n + -layer allows interpreting the nature of conductivity in one sub-layer through trapping mercury interstitials by dislocations and dislocation loops. The conductivity relaxation in this sub-layer occurs because the structure of such defects is rebuilt, with donor properties being lost.

show abstract

Time relaxation of point defects in p- and n-(HgCd)Te after ion milling

Cited by 38 publications

References 15 publications

Ion milling-assisted study of defect structure of HgCdTe films grown by liquid phase epitaxy

Ion milling-assisted study of defect structure of HgCdTe films grown by liquid phase epitaxy

Electrical properties of HgCdTe films grown by MOCVD and doped with as

Regularities of the Cd x Hg 1-x Te p-n junction formation by ion milling

Contact Info

Product

Resources

About