TXRF Semiconductor Applications

Hockett, R. S.

doi:10.1007/978-1-4615-2528-8_68

Cited by 10 publications

(2 citation statements)

References 26 publications

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“…(1)) by on half or one order of magnitude. In summary: (1) in the case of a trace determination using a TXRF analyzer, the existence of spurious peaks must be taken into account; (2) the incident azimuth must be selected so as to be the off-Bragg condition of the primary beam; (3) the influence of the intensity and statistical error of the spurious peak must be taken into account in any trace determination of less than 1012 Ni determination. The atoms/cm2 and 1011 atoms/cm2, respectively.…”

Section: Origins Of Spurious Peaks and Its Identificationmentioning

confidence: 99%

Spurious Peaks in Total Reflection X-Ray Fluorescence Analysis

et al. 1995

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This paper presents details concerning such spurious peaks as Fe Ka and Ni Ka radiation, which are often observed in the trace determination of metallic impurities on silicon wafers by using a monochromatic total reflection X-ray fluorescence (TXRF) analyzer. The intensity of a spurious peak varies along with changes in the incident azimuth angle and/or detected intensity of the primary X-ray beam. The origin of this phenomenon is impurities existing along the path of Xrays. This phenomenon influences the accuracy of trace TXRF analysis, and a practical detection limit of a TXRF analyzer becomes worse by approximately one order, becoming 10" atoms/cm2, than the calculated detection limit (2 -8X1010 atoms/cm2) in our case.

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Section: Origins Of Spurious Peaks and Its Identificationmentioning

confidence: 99%

Spurious Peaks in Total Reflection X-Ray Fluorescence Analysis

et al. 1995

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“…The TXRF method is applied to determine the contamination on an Si wafer. [3][4][5] There are cases where contamination exists on the wafer or inside the Si. This can be distinguished by scanning the detection angle of fluorescent x-rays or scanning the incident x-ray glancing angle; however, the incident angle is usually fixed near to the critical angle of total reflection in a routine TXRF analysis.…”

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confidence: 99%

Experimental Evaluation of the Mo Ka X-Ray Probing Depth for a GaAs Wafer in a Total-Reflection X-Ray Fluorescence Analysis

1997

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The total reflection x-ray fluorescence (TXRF) method is a powerful tool for the surface analysis of flat materials, such as Si wafers. The probing depth of TXRF is an important factor in a quantitative TXRF analysis. This is the first time that the probing depth under total-reflection conditions was experimentally evaluated by analyzing the takeoff-angle dependence of x-ray fluorescence. Our experimental results, measuring different incident angles, fit the theoretical curves. Finally, the relationship between the probing depth and the incident angle was obtained. We found the takeoffangle dependent measurement of x-ray fluorescence to be a powerful means for determining the probing depth in the TXRF method.

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