Two types of defect clusters in GaAs

Lomako, V. M.; Novoselov, A. M.

doi:10.1080/00337577908236972

Cited by 4 publications

(2 citation statements)

References 5 publications

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“…The results obtained show the defect clusters formed in GaAs by high-energy electrons and y-rays of the stopping spectrum to be identical, and that the basic compensation in the DC cores is defined by defects of the same type. I n GaAs the existence of defect clusters of I-and R-type is possible [16]. The threshold energy for the I-type cluster formation Ed1 = 2.8 keV, and for the creation of R-regions only the approximate value EaR = 15 keV is given.…”

Section: Experimenta1 Results and Discussionmentioning

confidence: 97%

Temperature dependence of the charge-carrier mobility in GaAs containing defect clusters

Kol'chenko

Lomako

1980

Phys. Stat. Sol. (a)

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The temperature dependence of the charge-carrier mobility in n-GaAs epitaxial films comprising defect clusters (DC) is studied. DC introduction is performed through irradiation by electrons with E = 28 MeV and y-rays of the electron stopping spectrum with the same energy. The mobility variation due t,o DC introduction is found to be a weak function of temperature. It is most effective in the high-temperature region and can be described in the limits of the polarization effect. It is shown that the concentration and ionization energy of the main compensating defects in DC cores can be determined from the temperature dependence of mobility. Their values inGaAs are 5 x loz1 cm-3 and AE, = E , -0.07 eV, respectively. Es wird die Temperaturabhangigkeit derLadungstragerbeweglichkeit in epitaktischen n. GaAs-Schicliten, die Defektcluster (DC) enthalten, untersucht. DC werden durch Bestrahlung mit 28 MeV-Elektronen und y-Strahlung des Elektronenbremsspektrums mit derselben Energie hervorgerufen. Die durch die Einfiihrung der DC hervorgerufene Beweglichkeitsanderung ist schwach temperaturabhangig. Sie ist am ausgepragtesten im Hochtemperaturbereich und IaBt sich mit dem Polarisationseinfluss erklaren. Es wird gezeigt, dal3 sich die Konzentration und Ionisierungsenergie der wesentlichen kompensierenden Defekte in DC-Kernen aus der Temperaturabhangigkeit bestimmen 1aBt. Ihre Werte in GaAs sind 5 x loz1 ~r n -~ bzw. AE, = E , -0,07 eV.

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Section: Experimenta1 Results and Discussionmentioning

confidence: 97%

Temperature dependence of the charge-carrier mobility in GaAs containing defect clusters

Kol'chenko

Lomako

1980

Phys. Stat. Sol. (a)

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“…At N , = 10' " cm-3 and N, = 10'6-10'8 cm-3 the distance between the levels should be not less than (10)(11)(12)(13)(14)(15)(16)(17)(18)(19)(20)kT, respectively. At T = 300 K this condition may be satisfied only for wide-band semiconductors.…”

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Kinetics of defect cluster annealing in semiconductors

Kol'chenko¹,

Lomako²

1980

Radiation Effects

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The change of the potential barrier height Acp at the boundary of the matrix and defect clusters introduced by the highenergy particle irradiation in the course of isothermal annealing is analyzed. It is found, that A 9 is independent of the matrix doping level and is determined by the energy position of defect levels in the core and their concentrations only. The relations describing the change in Acp during isothermal annealing of the defects in the core for the first-and the second-order reactions are obtained, allowing to determine the initial height of the potential barrier, the order of the reaction and the defect annealing activation energy in the core. On the basis of the results obtained the annealing of the defect clusters in GaAs has been analyzed.

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Athermal annealing of structure damage in GaAs

Lomako

Novoselov

1980

Phys. Stat. Sol. (a)

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The results are analysed of athermal annealing of structure defects, which are the nonradiative recombination centres in irradiated p‐GaAs. Annealing processes are studied by the recovery of electroluminescence quantum yield upon nonequilibrium charge‐carrier injection in the range of 77 to 300 K. The experimental data analysis makes it possible to suggest that upon charge‐carrier injection activation of migration takes place of B‐type defects with the level Ec – 0.03 eV, which are the sticking centres for electrons. In the course of migration these defects annihilate with nonradiative recombination centres annealed at 240°C.

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Two types of defect clusters in GaAs

Cited by 4 publications

References 5 publications

Temperature dependence of the charge-carrier mobility in GaAs containing defect clusters

Temperature dependence of the charge-carrier mobility in GaAs containing defect clusters

Kinetics of defect cluster annealing in semiconductors

Athermal annealing of structure damage in GaAs

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