Kinetics of defect cluster annealing in semiconductors

Abstract

The change of the potential barrier height Acp at the boundary of the matrix and defect clusters introduced by the highenergy particle irradiation in the course of isothermal annealing is analyzed. It is found, that A 9 is independent of the matrix doping level and is determined by the energy position of defect levels in the core and their concentrations only. The relations describing the change in Acp during isothermal annealing of the defects in the core for the first-and the second-order reactions are obtained, allowing to determine the initial height of the potential barrier, the order of the reaction and the defect annealing activation energy in the core. On the basis of the results obtained the annealing of the defect clusters in GaAs has been analyzed.

Rapid Thermal Annealing Induced Deep Level Defects in Te-Doped GaAs

“…Based on the observation of the large difference between its thermal and optical ionization energies, the deep donor is attributed to an arsenic interstitial related with a more strained configuration than EL2 [6]. Kolchenko et al observed a defect (which may be identified with EL6), whose emission is strongly dependent on the applied electric field, in g-irradiated GaAs:Te (10 17 cm À3 ); while in electron irradiated material, a defect with a metastable behaviour has been observed [7,8]. Thus the present study is aimed at a systematic investigation on the native defects and their rapid thermal annealing (RTA) induced transformations in Te-doped GaAs through deep level transient spectroscopic (DLTS) studies.…”