Two‐Terminal Self‐Gating Random‐Access Memory Based on Partially Aligned 2D Heterostructures

Abstract

2D materials exhibit unique electrical and mechanical properties, and therefore have been investigated extensively. One of their important applications is logic‐in‐memory, which can perform logic operations as well as store data. This makes it possible to overcome the intrinsic obstacles of the von Neuman computing architecture that uses separate processing and storage units. Herein, a two‐terminal self‐gating random‐access memory (SGRAM) based on partially aligned graphene/MoS2/h‐BN/graphene/h‐BN/Au heterostructures is proposed. One of the two electrodes acts as the drain as well as the gate electrodes; thus, the SGRAM exhibits both diode‐like behaviors and nonvolatile memory effects, allowing the construction of a simple crossbar array without a selector. The SGRAM crossbar array consisting of 2 × 2 cells is constructed and its random accessibility is verified by addressing each cell independently. In addition, reconfigurable AND/OR logic gates are implemented using the SGRAM array. Hence, it is demonstrated that SGRAMs are promising candidates for “Beyond von Neumann” computing architectures.

2D van der Waals Heterostructure with Tellurene Floating-Gate for Wide Range and Multi-Bit Optoelectronic Memory

“…Here, similar memory behaviors were observed, demonstrating the excellent reproducibility of our vdWh memory. The density of the trapped charges ( D ) can be calculated using the following formula: , D = false( normalΔ V × C total false) q where q is the elementary charge and C total is the dielectric capacitance between the control gate and the FG. C total can be obtained from C total = ε 0 × ε normalr d where ε 0 is the vacuum permittivity, ε r is the relative dielectric constant (3.9 for SiO 2 ), and d is the thickness of the SiO 2 insulating layer (300 nm) .…”

“…Here, similar memory behaviors were observed, demonstrating the excellent reproducibility of our vdWh memory. The density of the trapped charges (D) can be calculated using the following formula: 28,41…”

Vertical graphene/MoS2 van der Waals heterostructure photodetector

“…Molybdenum disulfide (MoS2) has achieved many research advances in various optoelectronic application, including photodetectors [1][2][3][4] and memristors [5][6][7] . However, the device based on a single material cannot satisfy some functions simultaneously, such as ultra-wide spectra, ultra-fast response, ultra-low dark current, which greatly limits the application development.…”