Vertical graphene/MoS2 van der Waals heterostructure photodetector

Abstract

Two-dimensional (2D) layered materials have aroused widespread interests due to their remarkable physical characteristics such as strong light-matter interaction and layered-dependent physical properties. Molybdenum disulfide (MoS2), one of the group of transition metal dichalcogenides (TMDCs), has many great applications on photoelectronic devices. Herein, based on high carrier mobility of graphene, a vertical graphene/MoS2 van der Waals heterostructure photodetector was designed and fabricated. With help of gap between graphene and MoS2, the responsibility of our device (7219 A W -1 at 532 nm) is better than that of MoS2 photodetector. As a transistor, on-off ratio of our device can be ~194. The results show the graphene-based heterostructure can provide numerous help for improving the performance of 2D photodetectors and transistor.

Towards large scale integration of MoS2/graphene heterostructure with ALD-grown MoS2

“…Recent works about MoS 2 /graphene phototransistors exhibit promising performance but most of the results published on MoS 2 /graphene phototransistors are based on mechanically exfoliated 2D materials [1,18,[21][22][23] and electron-beam lithography to demonstrate the feasibility of a single device. However, a key drawback of these methods is that they are not scalable.…”