1970
DOI: 10.1049/el:19700001
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Two-terminal negative dynamic resistance

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Cited by 11 publications
(6 citation statements)
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“…The basis of these circuits is formed by various combinations of BJT and FET. Conventionally, the circuits with NDR can be classified into the following groups: circuits with MOS transistors [7,8,[16][17][18]21], circuits with BJT transistors [10,14], circuits with BJT and JFET [11][12][13][14][15], circuits with JFET and MOS transistors [12,22], circuits with BJT and MOS transistors [9,20], and circuits with BJT and HBT [19]. It should be noted that in the known NDR devices and circuits it is practically impossible to change the angle of inclination of the current-voltage characteristics in the area of negative resistance.…”
Section: Discussionmentioning
confidence: 99%
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“…The basis of these circuits is formed by various combinations of BJT and FET. Conventionally, the circuits with NDR can be classified into the following groups: circuits with MOS transistors [7,8,[16][17][18]21], circuits with BJT transistors [10,14], circuits with BJT and JFET [11][12][13][14][15], circuits with JFET and MOS transistors [12,22], circuits with BJT and MOS transistors [9,20], and circuits with BJT and HBT [19]. It should be noted that in the known NDR devices and circuits it is practically impossible to change the angle of inclination of the current-voltage characteristics in the area of negative resistance.…”
Section: Discussionmentioning
confidence: 99%
“…Substituting V DS0 and V GS0 from (11) and (13) to the Statz model [24,25], we get the following nonlinear equations in respect to the drain current I 1 :…”
Section: Threshold Calculated Value Simulated Value Error %mentioning
confidence: 99%
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“…Esaki [13,14] and Gunn [15] were the pioneers of N-type NDR devices developing the tunnel and Gunn diodes, respectively, in 1957 and 1962. Stanley and Ager [16] proposed a two-terminal N-type NDR circuit based on one JFET and one bipolar junction transistor (BJT). Sharma and Dutta Roy [17] considered a versatile N-type NDR circuit comprising two BJTs and four resistors.…”
Section: Reviewmentioning
confidence: 99%