Two-step growth of InP on GaAs substrates by metalorganic vapor phase epitaxy

Microstructural improvements of InP on GaAs (001) grown by molecular beam epitaxy by in situ hydrogenation and postgrowth annealing

“…31 Annealing reduced the DTD near the surface of a 3 m layer one order of magnitude, while it was higher than 10 8 cm −2 for the as-grown layers. 12 Note that the best present DTD results ͑ϳ10 8 cm −2 TDs for a 2 m InP layer after RTA͒ are comparable to the values typical of metamorphically grown InP layers 6 m or thicker 18 and that just 2 m has been established as the film thickness above, which the TDs amounts start to dramatically decrease with increasing thickness. 32 However, it is unclear whether a relatively high DTD ͑10 6 -10 8 cm −2 ͒ enhances the diffusion of point defects and impurities toward the TD network in metamorphic InP.…”

“…11 An improved two-step growth method was also demonstrated in which the V/III ratio was lowered for the growth of an initial low-temperature layer at 400°C. 12 On fused InP/GaAs wafers no threading dislocations developed and the mismatch was accommodated entirely by misfit dislocations ͑MDs͒. [13][14][15] Derbali et al 16 fabricated good quality InP on the less-conventionally used ͑111͒ oriented GaAs with a remarkably reduced density of TDs ͑DTDs͒.…”

Advanced monolithic quantum well infrared photodetector focal plane array integrated with silicon readout integrated circuit

“…The major challenge for epitaxial growth of III-V semiconductor materials on Si substrate is how to reduce the high threading dislocation density which arises from the interfacial misfit dislocations due to the large lattice (8.1% between InP and Si) mismatch. There are many methods that have been demonstrated to reduce the threading dislocation density of InP or GaAs on Si substrates: using a two-step growth method [18], growing a thicker InP buffer layer [19], using a short-period strained superlattice (e.g. GaAs/InAs) in the buffer layer, growing on patterned Si substrate [20], localized epitaxy overgrowth, or treating the buffer layer with ex situ or in situ thermal annealing [21].…”

Growth of InP on GaAs (001) by hydrogen-assisted low-temperature solid-source molecular beam epitaxy

“…Numerous threading and misfit dislocations will come about once the critical film thickness is reached, thus hindering the realization of well-performing devices. Efforts have been made in the pursuit of growing high-quality buffer layers to suppress dislocations, such as strained-layer superlattice ͑SLS͒, 10,11 two-step, 12 [19][20][21][22][23] On the other hand, the introduction of hydrogen by plasma treatment after growth has been shown to passivate dislocations on MOVPE-grown InP layers on GaAs ͑001͒ wafers 24 and to enhance the luminescent properties of CS InP layers on GaAs. 25 Moreover, hydrogen introduced during MOVPE growth produces a substantial decrease of deep-level traps.…”