Two-qubit logic with anisotropic exchange in a fin field-effect transistor

Geyer, Simon; Hetényi, Bence; Bosco, Stefano; Camenzind, Leon C.; Eggli, Rafael S.; Fuhrer, Andreas; Loss, Daniel; Warburton, Richard J.; Zumbühl, Dominik M.; Kuhlmann, Andreas V.

doi:10.48550/arxiv.2212.02308

Cited by 6 publications

(11 citation statements)

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“…Recent years have seen rapid progress in the realization of spin qubits in semiconductors [1][2][3][4]. Hole spins in germanium (Ge) and silicon (Si) nanostructures are of particular interest thanks to the availability of allelectrical spin control [2,[5][6][7][8][9], short gate times [10][11][12], high-temperature qubit operation [13][14][15], intrinsically low concentration of spinful nuclei and reduced hyperfine interaction due to the p-type hole wavefunction [16] and the presence of noise sweet spots [17][18][19].…”

Section: Introductionmentioning

confidence: 99%

Cryogenic hyperabrupt strontium titanate varactors for sensitive reflectometry of quantum dots

Eggli¹,

Svab²,

Patlatiuk³

et al. 2023

Preprint

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Radio frequency reflectometry techniques enable high bandwidth readout of semiconductor quantum dots. Careful impedance matching of the resonant circuit is required to achieve high sensitivity, which however proves challenging at cryogenic temperatures. Gallium arsenide-based voltagetunable capacitors, so-called varactor diodes, can be used for in-situ tuning of the circuit impedance but deteriorate and fail at temperatures below 10 K and in magnetic fields. Here, we investigate a varactor based on strontium titanate with hyperabrupt capacitance-voltage characteristic, that is, a capacitance tunability similar to the best gallium arsenide-based devices. The varactor design introduced here is compact, scalable and easy to wirebond with an accessible capacitance range from 45 pF to 3.2 pF. We tune a resonant inductor-capacitor circuit to perfect impedance matching and observe robust, temperature and field independent matching down to 11 mK and up to 2 T in-plane field. Finally, we perform gate-dispersive charge sensing on a germanium/silicon core/shell nanowire hole double quantum dot, paving the way towards gate-based single-shot spin readout. Our results bring small, magnetic field-resilient, highly tunable varactors to mK temperatures, expanding the toolbox of cryo-radio frequency applications.

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Section: Introductionmentioning

confidence: 99%

Cryogenic hyperabrupt strontium titanate varactors for sensitive reflectometry of quantum dots

Eggli¹,

Svab²,

Patlatiuk³

et al. 2023

Preprint

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“…However, in silicon MOS quantum dots, reliable in situ control of t c has remained a challenge and has only recently been achieved. 29,30 We now use the n-type charge sensor to demonstrate smooth control of t c for a p-type planar hole double quantum dot. The voltage applied to the J-gate (J g ) allows control of interdot coupling.…”

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confidence: 99%

Combining n-MOS Charge Sensing with p-MOS Silicon Hole Double Quantum Dots in a CMOS platform

et al. 2023

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Holes in silicon quantum dots are receiving attention due to their potential as fast, tunable, and scalable qubits in semiconductor quantum circuits. Despite this, challenges remain in this material system including difficulties using charge sensing to determine the number of holes in a quantum dot, and in controlling the coupling between adjacent quantum dots. We address these problems by fabricating an ambipolar complementary metal-oxide-semiconductor (CMOS) device using multilayer palladium gates. The device consists of an electron charge sensor adjacent to a hole double quantum dot. We demonstrate control of the spin state via electric dipole spin resonance. We achieve smooth control of the interdot coupling rate over 1 order of magnitude and use the charge sensor to perform spin-to-charge conversion to measure the hole singlet−triplet relaxation time of 11 μs for a known hole occupation. These results provide a path toward improving the quality and controllability of hole spin-qubits.

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“…A key advantage of hole spins is their large and tunable spin-orbit interaction (SOI) enabling ultrafast all-electrical qubit operations [5][6][7][8][9][10][11], on-demand coupling to microwave photons [12][13][14], even without bulky micromagnets [15][16][17]. The large SOI of holes leads to interesting physical phenomena, such as electrically tunable Zeeman [6,[18][19][20][21][22] and hyperfine interactions [23][24][25], or exchange anisotropies at finite [26] and zero magnetic fields [27,28]. These effects can be leveraged for quantum information processing, e.g., to define operational sweet spots against noise [29][30][31][32][33][34]; to date their potential remains largely unexplored.…”

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confidence: 99%

“…We verify this prediction experimentally in a hole spin qubit in two different Si FinFETs described in detail in Refs. [11,26,66]. Our first (second) qubit Q1 (Q2) is operated at ω q /2π = 4.5 GHz (ω q /2π = 4.95 GHz) corre- sponding to a g factor g = 2.14 for B = 0.15 T (g = 2.72 for B = 0.13 T); g depends on the gate potential V with sensitivity ∂g/∂V ≈ −0.05 V −1 (∂g/∂V ≈ 0.41 V −1 ).…”

mentioning

confidence: 99%