Two-probe STM experiments at the atomic level

Kolmer, Marek; Olszowski, Piotr; Zuzak, Rafał; Godlewski, Szymon; Joachim, Christian; Szymoński, Marek

doi:10.1088/1361-648x/aa8a05

Cited by 30 publications

(44 citation statements)

References 59 publications

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“…Being able to interpret and predict the behavior of electrons over large-scale devices is of importance for graphene-based electronics, especially in the growing field of electron optics. Real-space visualization of charge (or spin) transport can be achieved experimentally using various quantum imaging techniques, including probe microscopy, [66,67] superconducting interferometry [68] and magnetometry with diamond-NV centers. [69] It has been shown that defects and contacts with tips at the atomic scale yield strong spatial variations of current flow in graphene devices.…”

Section: Applicationsmentioning

confidence: 99%

Multi-scale approach to first-principles electron transport beyond 100 nm

et al. 2019

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Multi-scale computational approaches are important for studies of novel, low-dimensional electronic devices since they are able to capture the different length-scales involved in the device operation, and at the same time describe critical parts such as surfaces, defects, interfaces, gates, and applied bias, on a atomistic, quantum-chemical level. Here we present a multi-scale method which enables calculations of electronic currents in two-dimensional devices larger than 100 nm 2 , where multiple perturbed regions described by density functional theory (DFT) are embedded into an extended unperturbed region described by a DFT-parametrized tight-binding model. We explain the details of the method, provide examples, and point out the main challenges regarding its practical implementation. Finally we apply it to study current propagation in pristine, defected and nanoporous graphene devices, injected by chemically accurate contacts simulating scanning tunneling microscopy probes. arXiv:1812.08054v2 [cond-mat.mes-hall]

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Section: Applicationsmentioning

confidence: 99%

Multi-scale approach to first-principles electron transport beyond 100 nm

et al. 2019

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“…Both atomic scale manipulation and in situ transport characterization can be performed successively without exposure to the ambient environment. [16] The application of the atomic scale manipulation with STM relies on its ability to tailor the structure of the materials in atomic precision and tune their physical properties as designed.…”

Section: Introductionmentioning

confidence: 99%

“…The advent of multiprobe STM made it possible to both fabricate and characterize atomic structures in situ on semiconductor surfaces. [16] Continuous development of multiprobe STM allowed for detecting transport of charge and spin in the atomic scale, [30] and further application of these techniques will not only enable revealing of the transport of the quantum states but also provide a route to manipulate and control the structures to observe the responses of these states.…”

Section: Introductionmentioning

confidence: 99%

Atomic‐Scale Manipulation and In Situ Characterization with Scanning Tunneling Microscopy

Nguyen

et al. 2019

Adv Funct Materials

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Scanning tunneling microscope (STM) has presented a revolutionary methodology to the nanoscience and nanotechnology. It enables imaging the topography of surfaces, mapping the distribution of electronic density of states, and manipulating individual atoms and molecules, all at the atomic resolution. In particular, the atom manipulation capability has evolved from fabricating individual nanostructures towards the scalable production of the atomic-sized devices bottom-up. The combination of precision synthesis and in situ characterization of the atomically precise structures has enabled direct visualization of many quantum phenomena and fast proof-of-principle testing of quantum device functions with real-time feedback to guide the improved synthesis. In this article, several representative examples are reviewed to demonstrate the recent development of atomic scale manipulation. Especially, the review focuses on the progress that address the quantum properties by design through the precise control of the atomic structures in several technologically relevant materials systems. Besides conventional STM manipulations and electronic structure characterization with single-probe

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“…Its resistance can also be measured by collecting I – V curves using two nanorod probes (1 and 2) with varied distance. Moreover, 2P‐STM has successfully detected a 70 nm long dangling bond dimer (DB) wire, which was supported on a hydrogenated Ge(001) substrate (Figure d–g) . From the atomic resolution STM images in Figure d,g, it is not difficult to detect the DB dimers and some atomic scale defects, including several single Ge atoms and vacancies.…”

Section: Multiprobe Advanced Characterization Methodsmentioning

confidence: 99%

Section: Multiprobe Advanced Characterization Methodsmentioning

confidence: 99%

Emerging Scanning Probe–Based Setups for Advanced Nanoelectronic Research

Hui

Wen

Chen

et al. 2019

Adv Funct Materials

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Figure 3. a) Schematic of the CAFM integrated into the SEM. b) SEM image of a CAFM tip landed on the NW arrays. c) Top-view SEM image of the ZnO NW arrays. d) AFM topographic map of the as-fabricated ZnO NW arrays collected in tapping mode using a Si tip. Reproduced with permission. [109] Despite the main drawback of this method is the instability of the filament due to the extreme thinness of the lamella, one work proved a stable cyclic operation (more than 60 switching cycles) in 30 nm CuTe-based conductive bridging random access memory (CBRAM). [119] Multiprobe Advanced Characterization MethodsDespite the high lateral resolution of SPM represents a very strong advantage compared to traditional electrical characterization methods (i.e., probe station), the use of only one probe Adv. Funct. Mater. 2020, 30, 1902776Figure 4. a) TEM image of an overview of a sample; each finger contains a stack of Ni/HfO 2 /SiO x /n + Si. Current-time plots indicate the typical b) SET and c) RESET processes. d) TEM image (top) and corresponding EDS nickel map (bottom) of the device in a SET state. Reproduced with permission. [114] Copyright 2015, Wiley VCH. e) I-V graph of in situ electroforming and RESET of Pt/ZnO/Pt where the top electrode (TE) was negatively biased while the bottom electrode (BE) was grounded, and corresponding f-h) electroforming and i,j) RESET images extracted. Reproduced with permission. [118]

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Two-probe STM experiments at the atomic level

Cited by 30 publications

References 59 publications

Multi-scale approach to first-principles electron transport beyond 100 nm

Multi-scale approach to first-principles electron transport beyond 100 nm

Atomic‐Scale Manipulation and In Situ Characterization with Scanning Tunneling Microscopy

Emerging Scanning Probe–Based Setups for Advanced Nanoelectronic Research

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