Emerging Scanning Probe–Based Setups for Advanced Nanoelectronic Research

Abstract

Figure 3. a) Schematic of the CAFM integrated into the SEM. b) SEM image of a CAFM tip landed on the NW arrays. c) Top-view SEM image of the ZnO NW arrays. d) AFM topographic map of the as-fabricated ZnO NW arrays collected in tapping mode using a Si tip. Reproduced with permission. [109] Despite the main drawback of this method is the instability of the filament due to the extreme thinness of the lamella, one work proved a stable cyclic operation (more than 60 switching cycles) in 30 nm CuTe-based conductive bridging random access memory (CBRAM). [119] Multiprobe Advanced Characterization MethodsDespite the high lateral resolution of SPM represents a very strong advantage compared to traditional electrical characterization methods (i.e., probe station), the use of only one probe Adv. Funct. Mater. 2020, 30, 1902776Figure 4. a) TEM image of an overview of a sample; each finger contains a stack of Ni/HfO 2 /SiO x /n + Si. Current-time plots indicate the typical b) SET and c) RESET processes. d) TEM image (top) and corresponding EDS nickel map (bottom) of the device in a SET state. Reproduced with permission. [114] Copyright 2015, Wiley VCH. e) I-V graph of in situ electroforming and RESET of Pt/ZnO/Pt where the top electrode (TE) was negatively biased while the bottom electrode (BE) was grounded, and corresponding f-h) electroforming and i,j) RESET images extracted. Reproduced with permission. [118]

Sub-10 nm patterning of few-layer MoS2 and MoSe2 nanolectronic devices by oxidation scanning probe lithography

“…Scanning probe lithography (SPL) includes a variety of high-resolution patterning methods based on the use of a force microscope (AFM) [21][22][23][24][25][26]. Despite the serial processing nature of SPL, the development of mix-and-match processes [27][28][29] or large-area patterning tools [30][31][32] underline the potential of SPL with improved throughput.…”

Interfacial‐Strain‐Controlled Ferroelectricity in Self‐Assembled BiFeO3 Nanostructures

“…Piezoresponse force microscopy (PFM) is an essential tool for studying ferroelectric properties of such systems with nanoscale spatial variations. [1,2,[4][5][6][7][8][9]14,[16][17][18][19][20][21]38,39,43,44] For ferroelectric switching of BFO-CFO VAN systems, however, only one or a few local hysteresis loops are typically measured, usually by "parking" a conductive atomic force microscopy (AFM) probe at single or arrayed points in BFO, sweeping the tip-sample bias, and recording the resulting changes in the piezoresponse. [2,4,11,[15][16][17][18]28,38] Single-point hysteresis measurements can be challenging to interpret, though, due to the superposition of piezoelectric effects and electrostatics [45] or ionic motion.…”

Plasmonic Hot Carrier Induced Photosensitization of CdSe Quantum Dots: Role of Phonons

“…Therefore, one of the main objectives of this study is to probe these defect energy states located inside the band gap of the semiconductor QDs with the help of photoassisted scanning tunneling spectroscopy (PATS). 14 It has already been explored that the presence of free electron density and its corresponding electromagnetic field can have plasmon oscillations at a noble metal's surface because of their negative permittivity. 2,15,16 In particular, surface plasmons can be excited further by illuminating with light having resonance energy, which usually propagates as an electromagnetic wave, popularly known as polaritons.…”

“…However, the efficient detection of the position of defect states inside the band gap of a semiconducting nanomaterial is still unexplored. Therefore, one of the main objectives of this study is to probe these defect energy states located inside the band gap of the semiconductor QDs with the help of photoassisted scanning tunneling spectroscopy (PATS) …”