Three-Dimensional Microfabrication Using Two-Photon Polymerization 2016
DOI: 10.1016/b978-0-323-35321-2.00019-4
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Two-Photon Polymerization as a Component of Desktop Integrated Manufacturing Platforms

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Cited by 5 publications
(4 citation statements)
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References 128 publications
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“…It then returns to the left-hand side of the wafer where it scans a new line until having analysed the entire surface, only switching on when the exposure is required. In a vector scan, the image is split into vectors, which contain the features and, instead of scanning the entire wafer, the electron beam moves from feature to feature [ 13 ]. The photomasks consist of a chrome layer deposited on a quartz substrate where the chrome layer is etched to create the pattern, which will be transferred to the photoresist, whilst the quartz substrate allows the electron transmission [ 127 ].…”
Section: Conventional Lithographic Techniquesmentioning
confidence: 99%
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“…It then returns to the left-hand side of the wafer where it scans a new line until having analysed the entire surface, only switching on when the exposure is required. In a vector scan, the image is split into vectors, which contain the features and, instead of scanning the entire wafer, the electron beam moves from feature to feature [ 13 ]. The photomasks consist of a chrome layer deposited on a quartz substrate where the chrome layer is etched to create the pattern, which will be transferred to the photoresist, whilst the quartz substrate allows the electron transmission [ 127 ].…”
Section: Conventional Lithographic Techniquesmentioning
confidence: 99%
“…The amount of forward scattering is also reduced since the heavier ions have more momentum than electrons; the combination of the higher mass and momentum of the ions decreases the beam wavelength in comparison to an electron beam, drastically decreasing the amount of diffraction and increasing the resolution [ 20 ]. Furthermore, structures produced with FIBL are subjected to less radiation damage than EBL, due to FIBL having a high exposure sensitivity (with only 1–10% of particles being required in comparison to EBL to expose the resist) and the resist absorbing the majority of the ions [ 13 ].…”
Section: Conventional Lithographic Techniquesmentioning
confidence: 99%
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