2011
DOI: 10.1186/1556-276x-6-519
|View full text |Cite
|
Sign up to set email alerts
|

Two novel low-power and high-speed dynamic carbon nanotube full-adder cells

Abstract: In this paper, two novel low-power and high-speed carbon nanotube full-adder cells in dynamic logic style are presented. Carbon nanotube field-effect transistors (CNFETs) are efficient in designing a high performance circuit. To design our full-adder cells, CNFETs with three different threshold voltages (low threshold, normal threshold, and high threshold) are used. First design generates SUM and COUT through separate transistors, and second design is a multi-output dynamic full adder. Proposed full adders are… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1
1

Citation Types

0
14
0

Year Published

2013
2013
2021
2021

Publication Types

Select...
8
2

Relationship

3
7

Authors

Journals

citations
Cited by 18 publications
(14 citation statements)
references
References 17 publications
0
14
0
Order By: Relevance
“…The emerging new generation of transistors such as CNTFET (Carbon Nano Tube Field Effect Transistor), has helped in overcoming some limitations of CMOS technology. Therefore, many of these full adders are designed using this new technology [8][9][10][11][12][13]. CNTFET transistors have better performance compared to CMOS transistors.…”
Section:  mentioning
confidence: 99%
“…The emerging new generation of transistors such as CNTFET (Carbon Nano Tube Field Effect Transistor), has helped in overcoming some limitations of CMOS technology. Therefore, many of these full adders are designed using this new technology [8][9][10][11][12][13]. CNTFET transistors have better performance compared to CMOS transistors.…”
Section:  mentioning
confidence: 99%
“…Another Multi-Output structure has been proposed in [12] (Figure 2). A capacitor network averages input variables …”
Section: Literature Review On Previously Presented Dynamic Addersmentioning
confidence: 99%
“…[1][2][3][4][5][6] Since integrated circuits in Metal Oxide Semiconductor Field Effect Transistors (MOSFET) technology keep to scale down into nanometer limited areas, this art is starting to face various troublous challenges. Several of these challenges are: intensive process variations, decreased gate control, increased short-channel effects, and exponentially rising leakage currents.…”
Section: Introductionmentioning
confidence: 99%