Two-micrometer-wavelength laser-produced tin plasma EUV sources

Behnke, Lars; Mostafa, Yahia; Bouza, Zoi; Lassise, Adam; Poirier, Lucas; Sheil, John; Ubachs, Wim; Versolato, Oscar

doi:10.1117/12.2642234

Cited by 1 publication

(1 citation statement)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The collector lens captures about 80 percent of the light emitted from the plasma and images the plasma to intermediate focus (IF) with a magnification of about six and an image-side numerical aperture (NA) of about 0.3. The diameter of the tin droplet pancake after pre-pulse is between 100 microns and 300 microns, 5 leading to an EUV diameter between 600 microns and 1800 microns at IF. The angle of incidence across the collector lens is shown in Fig.…”

Section: Scanner Source and Illumination System Backgroundmentioning

confidence: 99%

On the compatibility of free-electron lasers with EUV scanners

Anderson

2024

Optical and EUV Nanolithography XXXVII

View full text Add to dashboard Cite

The compatibility of Free-Electron Lasers (FELs) with Extreme Ultraviolet (EUV) scanners is a pivotal consideration as EUV lithography advances. Unlike plasma sources that emit incoherent light, FELs offer relatively coherent light with distinct characteristics including narrower bandwidth, higher repetition rates, and shorter pulse durations. This study elaborates on the integration process of FEL sources with existing scanner systems without necessitating modifications to the scanner's illumination or projection optics. We delve into the coherence and speckle considerations crucial for maintaining image quality and minimizing defects in photolithography. Our findings reveal that the spatio-temporal splitting of FEL pulses, facilitated by the scanner's illumination system, effectively mitigates coherence and speckle-related challenges. Moreover, the analysis of potential pulse damage reveals that despite the high peak power of FELs, the design of the scanner ensures that the risk of damage to optics is minimal. This research shows that it is practical and possible to use FEL sources in EUV scanners, enhancing their performance and efficiency in semiconductor manufacturing.

show abstract

Section: Scanner Source and Illumination System Backgroundmentioning

confidence: 99%

On the compatibility of free-electron lasers with EUV scanners

Anderson

2024

Optical and EUV Nanolithography XXXVII

View full text Add to dashboard Cite

show abstract

Two-micrometer-wavelength laser-produced tin plasma EUV sources

Cited by 1 publication

References 0 publications

On the compatibility of free-electron lasers with EUV scanners

On the compatibility of free-electron lasers with EUV scanners

Contact Info

Product

Resources

About