A large number of methods exist for the extraction of parameters and calculation of C-V characteristics that account for quantum effects [5]. These methods are based on the calculation of C-V characteristics for each set of parameters. In other works, [6], [7], a statistical approach is suggested, which is based on the comparison of the experimental curve to a database created in advance. This can work for silicon-on-insulator (SOI) structures as well as bulk substrate. The usage of a database containing the selfconsistent solutions of Schrodinger-Poisson equations can decrease the modeling time noticeably. However, the and Manufacturing Complex "Technological Center", Georgievsky prospect 5, 124498, Zelenograd, Moscow, Russia, V.Grudtsov@tcen.ru An automatic MOS structure parameter extraction algorithm accounting for quantum effects has been developed and applied in the semiconductor device analyzer Agilent B1500A. Parameter extraction is based on matching the experimental C-V data with numerical modeling results. The algorithm is used to extract the parameters of test MOS structures with ultrathin gate dielectrics. The applicability of the algorithm for the determination of distribution function of DOS and finding the donor defect level in silicon is shown.