2006
DOI: 10.1109/led.2006.873423
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Two-frequency C-V correction using five-element circuit model for high-k gate dielectric and ultrathin oxide

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Cited by 28 publications
(16 citation statements)
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“…Parasitic effects in MOS devices included parasitic resistances and capacitances such as bulk series resistances, series contact, cables and many other parasitic effects [34]. Five different sources of parasitic series resistance have been suggested [35].…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…Parasitic effects in MOS devices included parasitic resistances and capacitances such as bulk series resistances, series contact, cables and many other parasitic effects [34]. Five different sources of parasitic series resistance have been suggested [35].…”
Section: Resultsmentioning
confidence: 99%
“…The k -values of the La x Zr 1−x O 2 ( x = 0.22, 0.35 and 0.63) dielectrics clearly show a power-law dependence on frequency known as the CS law, kfn1, (0 ≤ n ≤ 1) [33,34]. For La x Zr 1−x O 2−δ thin films with x = 0.63, x = 0.35 and x = 0.22 La content, the dielectric relaxation response could be fitted by the pure CS law, the n values were 0.981, 0.98 and 0.985 when the composition of La, x , were 0.22, 0.35 and 0.63, respectively.…”
Section: Resultsmentioning
confidence: 99%
“…Analytic solutions of such models are considered in [20]- [24], but the general solution method for such models is the numerical solution. A MOS equivalent capacitance determination algorithm was written for the Agilent B1500A, which utilizes highfrequency measurements and 3-element model calculated from the 2-element model extracted from the experimental data.…”
Section: Measurement Methodsmentioning
confidence: 99%
“…This explains the C-V frequency dispersion in siliconbased MOS with an ultrathin SiO 2 layer as gate dielectric [i.e., equivalent oxide thickness (EOT) <2 nm]. Several studies have presented the circuit models and analytical formulas considering the parasitic effects (i.e., series resistance, contact resistance, substrate resistance, and cable imperfections) for C-V measurement correction based on the two-frequency technique [7], [9], [10]. For III-V semiconductor-based MOS devices, there exists a larger dispersion in high-frequency C-V compared with silicon-based MOS devices [11]- [15].…”
Section: Introductionmentioning
confidence: 99%