Two-dimensional van der Waals heterostructure of indium selenide/antimonene: Efficient carrier separation

Shen, Naifeng; Yang, Xiaodong; Wang, Xinxin; Wang, Guanghou; Wan, Jing

doi:10.1016/j.cplett.2019.04.055

Cited by 7 publications

(6 citation statements)

References 45 publications

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“…Thus Sb/InSe heterostructure gives intrinsic type-II band alignment, where the electrons and holes are localized in the InSe and Sb layers, respectively. This result agrees well with the previous investigations[44,46]. The type-II band alignment suggests that the spatial separation of electron and hole can be realized[58].…”

supporting

confidence: 93%

“…Antimonene has been synthesized by different method in experiments [42,43]. The electronic and optical properties of Sb/InSe vdW heterostructure have been investigated by several groups [44][45][46]. The Sb/InSe heterostructure exhibits intrinsic type-II band alignment, where the electrons and holes are localized in the InSe and Sb layers, respectively.…”

Section: Introductionmentioning

confidence: 99%

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Dipole control of Rashba spin splitting in a type-II Sb/InSe van der Waals heterostructure

Wang

et al. 2020

J. Phys.: Condens. Matter

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InSe monolayer, belonging to group III–VI chalcogenide family, has shown promising performance in the realm of spintronic. Nevertheless, the out-of-plane mirror symmetry in InSe monolayer constrains the electrons' degrees of freedom, and this will confine its spin-related applications. Herein, we construct Sb/InSe van der Waals heterostructure to extend the electronic and spintronic properties of InSe. The density functional theory is utilized to verify the tunable electronic properties and Rashba spin splitting (RSS) of Sb/InSe heterostructure. According to the obtained results, the Sb/InSe heterostructure can be considered as a direct band gap semiconductor with typical type-II band alignment, where the electrons and holes are localized in the InSe and Sb layers, respectively. The RSS is recognized at conduction band minimum around Γ point in Sb/InSe, which is induced by the spontaneous internal electric field with electric dipole moment of 0.016 e Å from Sb to InSe. The vertical strain, in-plane strain, and external electric field are employed to modulate the strength of RSS. The Rashba coefficient and dipole moment exhibit the similar variation tendency, suggesting the strength of RSS depends on the magnitude of dipole moment. The controllable RSS makes Sb/InSe heterostructure become an appropriate candidate material for spintronic devices.

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supporting

confidence: 93%

Section: Introductionmentioning

confidence: 99%

Dipole control of Rashba spin splitting in a type-II Sb/InSe van der Waals heterostructure

Wang

et al. 2020

J. Phys.: Condens. Matter

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“…The coupling effect of BN with other components (graphene, graphite or metal) is strong, which means BN-based heterostructures can be used as a stable, high-purity and high-performance nano-scale dielectric material [32][33][34][35]. Moreover, a type-II band alignment was found in GaSe/MoSe 2 [36], black phosphorene/MoS 2 [37], Sb/graphene [38] and Sb/selenide [39] heterostructures. The type-II band arrangement can transfer holes and electrons to different materials, thus reducing the exciton recombination and increasing the exciton lifetime.…”

Section: Introductionmentioning

confidence: 99%

Structural and Electronic Properties of Heterostructures Composed of Antimonene and Monolayer MoS2

Zhou

2020

Nanomaterials

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Antimonene is found to be a promising material for two-dimensional optoelectronic equipment due to its broad band gap and high carrier mobility. The van der Waals heterostructure, as a unique structural unit for the study of photoelectric properties, has attracted great attention. By using ab initio density functional theory with van der Waals corrections, we theoretically investigated the structural and electronic properties of the heterostructures composed of antimonene and monolayer MoS2. Our results revealed that the Sb/MoS2 hetero-bilayer is an indirect semiconductor with type-II band alignment, which implies the spatial separation of photogenerated electron–hole pairs. Due to the weak van der Waals interlayer interactions between the adjacent sheets of the hetero-bilayer systems, the band structures of isolated antimonene and monolayer MoS2 are preserved. In addition, a tunable band gap in Sb/MoS2 hetero-bilayer can be realized by applying in-plane biaxial compressing/stretching. When antimonene and monolayer MoS2 are stacked into superlattices, the indirect semiconductors turn into direct semiconductors with the decreased band gaps. Our results show that the antimonene-based hybrid structures are good candidate structures for photovoltaic devices.

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“…A type-II heterostructure InSe/β-Sb shows the efficient carrier separation for optoelectronics applications. 18 The silicene/Sc 2 CF 2 heterostructure looks promising for high-performance FETs with high carrier mobilities in nanoelectronics. 19 …”

Section: Introductionmentioning

confidence: 99%

“…A type-II heterostructure InSe/β-Sb shows the efficient carrier separation for optoelectronics applications. 18 The silicene/Sc looks promising for high-performance FETs with high carrier mobilities in nanoelectronics. 19 Ge/GaGeTe is an excellent heterostructure with electric field-induced archetype data storage device having high carrier mobility and tunable band gaps.…”

Section: Introductionmentioning

confidence: 99%

Tuning the Electronic and Optical Properties of the ZrS₂/PtS₂ van der Waals Heterostructure by an External Electric Field and Vertical Strain

et al. 2022

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Two-dimensional (2D) material-based heterostructures gain increasing interest due to their extraordinary properties and excellent potential for the optoelectronic devices. This study deals with modulation of electronic and optical properties of the ZrS 2 /PtS 2 van der Waals heterostructure under vertical strain and an external electric field based on first principles calculation. Different stacking of ZrS 2 and PtS 2 layers are considered for the heterostructure formation and the most stable structure with lowest binding energy is selected for further calculations. The stable ZrS 2 /PtS 2 heterostructure shows an indirect band gap of 0.74 eV, which is smaller than that of both ZrS 2 and PtS 2 monolayers. With the applied external electric field, the band gap value of the ZrS 2 /PtS 2 heterostructure increases with the negative electric field and decreases with the positive electric field. It is observed that the indirect-to-direct band gap transition occurs when the highest negative value of the electric field is applied. In the case of vertical strain applied to the heterostructure, with an increase in compressive strain, the band gap decreases and vice versa for tensile strain. Optical absorption spectra show significant absorption in the visible light region to the ultraviolet light region. This study shows that the electronic and optical properties of ZrS 2 /PtS 2 heterostructures can be modulated by using vertical strains and an external electric field.

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Two-dimensional van der Waals heterostructure of indium selenide/antimonene: Efficient carrier separation

Cited by 7 publications

References 45 publications

Dipole control of Rashba spin splitting in a type-II Sb/InSe van der Waals heterostructure

Dipole control of Rashba spin splitting in a type-II Sb/InSe van der Waals heterostructure

Structural and Electronic Properties of Heterostructures Composed of Antimonene and Monolayer MoS2

Tuning the Electronic and Optical Properties of the ZrS₂/PtS₂ van der Waals Heterostructure by an External Electric Field and Vertical Strain

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Two-dimensional van der Waals heterostructure of indium selenide/antimonene: Efficient carrier separation

Cited by 7 publications

References 45 publications

Dipole control of Rashba spin splitting in a type-II Sb/InSe van der Waals heterostructure

Dipole control of Rashba spin splitting in a type-II Sb/InSe van der Waals heterostructure

Structural and Electronic Properties of Heterostructures Composed of Antimonene and Monolayer MoS2

Tuning the Electronic and Optical Properties of the ZrS2/PtS2 van der Waals Heterostructure by an External Electric Field and Vertical Strain

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Tuning the Electronic and Optical Properties of the ZrS₂/PtS₂ van der Waals Heterostructure by an External Electric Field and Vertical Strain