Two-dimensional thermal oxidation of silicon. II. Modeling stress effects in wet oxides

Kao, D. B.; McVittie, J.P.; Nix, William D.; Saraswat, Krishna C.

doi:10.1109/16.2412

Cited by 376 publications

(381 citation statements)

References 20 publications

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“…In the case of a pillar diameter of several tens of nm or less, when high temperature heat is applied by thermal oxidation process, silicon atoms constituting the pillar crystal moves and the phenomenon occurs in which the pillar structure cannot be maintained. Such thermal oxidation of the Si pillar structure already has been studied by many researchers [12][13][14][15][16][17][18][19]. Liu et.al.…”

Section: Introductionmentioning

confidence: 99%

Influence of Oxygen Concentration of Si Wafer Surface in Si Emission on Nano Ordered Three-Dimensional Structure Devices

Fukuda

Endoh

Ishikawa

et al. 2017

e-J. Surf. Sci. Nanotech.

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In past studies, the Si emission phenomenon is one of the issues for fabrication of 3D structure devices such as FinFETs and Vertical MOSFETs. In this paper, it is found that novel Si emission phenomena depending on the surface oxygen concentration of Si wafer occur, when Si pillars patterned less than 100 nm are oxidized. A wafer with high oxygen concentration which is over 1.0×1018 atoms/cm 3 can suppress Si emission from the Si pillar compared to the low oxygen concentration wafers which are less than 1.0×1017 atoms/cm 3 . The difference of oxygen concentration in the Si substrate is expected to largely depend on the behavior of oxygen atom in the Si wafer before and after oxidation. In case of an oxygen concentration ratio exceeding the solid solubility of Si, oxygen diffuses outward from the Si substrate after oxidation, whereas oxygen diffuses inward when the concentration is below the solid solubility. It was also found that the larger the degree of injection of oxygen into the Si substrate after oxidation, the larger the emission amount of Si from the Si pillar. Finally, we discuss the mechanism of above experimental Si emission phenomena in nanoscale Si pillar with previous first principle model of silicon oxidation process.

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Section: Introductionmentioning

confidence: 99%

Influence of Oxygen Concentration of Si Wafer Surface in Si Emission on Nano Ordered Three-Dimensional Structure Devices

Fukuda

Endoh

Ishikawa

et al. 2017

e-J. Surf. Sci. Nanotech.

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“…However, as most studies have been performed at high temperature, the role of stress in room temperature oxidation and the importance of cyclic loading are far less clear. Studies on the effect of geometry on oxidation would suggest that the oxide at the notch root should be thinner than that found on flat surfaces [38,39]; this further implies the critical role of stress. Furthermore, it is generally accepted that stress can modify the diffusivity of a species in a given material [40]; indeed, high-temperature oxidation studies in silicon suggest contributions on the order of 5 to 10% of the stress-free activation energy for thermally grown oxides [34][35][36][37].…”

Section: Fatigue Fracturesmentioning

confidence: 99%

“…The notion of a mechanical driving force for oxidation is already a central feature of models for the oxidation of silicon [34][35][36][37][38][39]. The presence of a compressive stress in the oxide primarily due lattice and thermal mismatch is thought to be responsible for the details of shape effects in oxidation as well as the initially high oxidation rates observed during the early stages of oxide growth [34][35][36][37][38][39]. However, as most studies have been performed at high temperature, the role of stress in room temperature oxidation and the importance of cyclic loading are far less clear.…”

Section: Fatigue Fracturesmentioning

confidence: 99%

A reaction-layer mechanism for the delayed failure of micron-scale polycrystalline silicon structural films subjected to high-cycle fatigue loading

2002

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Abstract-A study has been made of high-cycle fatigue in 2-µm thick structural films of n + -type, polycrystalline silicon for MEMS applications. Using an "on-chip" test structure resonating at ~40 kHz, such thin-film polysilicon is shown to display "metal-like" stress-life fatigue behavior in room air environments, with failures occurring after lives in excess of 10 11 cycles at stresses as low as half the fracture strength. Through in-situ monitoring of the natural frequency to evaluate the damage evolution by notch-root oxidation and cracking, and using transmission electron microscopy to image such damage, it is concluded that the mechanism of thin-film silicon fatigue involves sequential oxidation and environmentallyassisted cracking in the native SiO 2 layer. This moisture-induced "reaction-layer fatigue" mechanism can also occur in bulk silicon but it is only significant in thin films where the critical crack size for catastrophic failure can be reached by a crack growing within the oxide layer. The susceptibility of thin-film silicon to fatigue failure is shown to be suppressed by the use of alkene-based self-assembled monolayer coatings that prevent the formation of the native oxide.

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“…[49] However, in our case, the viscous flow contribution is negligible and, consequently, accumulated stress suppresses further oxidation. Moreover, earlier experimental [50] and theoretical [51] studies have demonstrated that oxidation of concave surfaces, a typical geometry for pores in LPSi, progresses at a much lower rate than oxidation of flat surfaces. Thus, it is reasonable to suggest that the oxidized areas primarily form "islands" in the regions between pores, leaving the Si inside the pores exposed.…”

Section: Resultsmentioning

confidence: 99%

Selective Response of Mesoporous Silicon to Adsorbants with Nitro Groups

McLeod¹,

Kurmaev²,

Sushko³

et al. 2012

Chemistry A European J

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We demonstrate that the electronic structure of mesoporous silicon is affected by adsorption of nitro-based explosive molecules in a compoundselective manner. This selective response is demonstrated by probing the adsorption of two nitro-based molecular explosives (trinitrotoluene and cyclotrimethylenetrinitramine) and a nonexplosive nitro-based aromatic molecule (nitrotoluene) on mesoporous silicon using soft X-ray spectroscopy. The Si atoms strongly interact with adsorbed molecules to form Si-O and Si-N bonds, as evident from the large shifts in emission energy present in the Si L2,3 X-ray emission spectroscopy (XES) measurements. Furthermore, we find that the energy gap of mesoporous silicon changes depending on the adsorbant, as estimated from the Si L2,3 XES and 2p Xray absorption spectroscopy (XAS) measurements. Our ab initio molecular dynamics calculations of model compounds suggest that these changes are due to spontaneous breaking of the nitro groups upon contacting surface Si atoms. This compound-selective change in electronic structure may provide a powerful tool for the detection and identification of trace quantities of airborne explosive molecules.

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Two-dimensional thermal oxidation of silicon. II. Modeling stress effects in wet oxides

Cited by 376 publications

References 20 publications

Influence of Oxygen Concentration of Si Wafer Surface in Si Emission on Nano Ordered Three-Dimensional Structure Devices

Influence of Oxygen Concentration of Si Wafer Surface in Si Emission on Nano Ordered Three-Dimensional Structure Devices

A reaction-layer mechanism for the delayed failure of micron-scale polycrystalline silicon structural films subjected to high-cycle fatigue loading

Selective Response of Mesoporous Silicon to Adsorbants with Nitro Groups

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