Two-dimensional spin confinement in strained-layer quantum wells

Martin, Roland; Nicholas, R.J.; Rees, Gregory J.; Haywood, S. K.; Mason, Nigel J.; Walker, P.J.

doi:10.1103/physrevb.42.9237

Cited by 79 publications

(41 citation statements)

References 23 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…This leads to m * ∼ 0.08 − 0.1 m 0 , which is consistent with previously measured values of m * at higher densities. For a Ge 2D hole system, the effective g factor is expected to be highly anisotropic due to the symmetry of the valance band as well as quantum confinement and strain, which set a preferential orientation for hole spins [16,18,23,24]. However, the in-plane component g ip of Ge 2D holes is difficult to measure quantitatively.…”

mentioning

confidence: 99%

Effective g factor of low-density two-dimensional holes in a Ge quantum well

Harris

Huang

et al. 2017

Applied Physics Letters

View full text Add to dashboard Cite

show abstract

mentioning

confidence: 99%

Effective g factor of low-density two-dimensional holes in a Ge quantum well

Harris

Huang

et al. 2017

Applied Physics Letters

View full text Add to dashboard Cite

show abstract

“…Such a response may arise when sh is of the same order as se . This is very well possible in QDs, where similar to the situation in quantum wells, 12 due to quantum confinement effects, the degeneracy between heavy and light holes is lifted. Therefore, the hole spins do not precess and sh is enhanced up to several orders of magnitude.…”

Section: Resultsmentioning

confidence: 89%

Optical control over electron g factor and spin decoherence in (In,Ga)As∕GaAs quantum dots

Rietjens

Quax

Bosco

et al. 2008

Journal of Applied Physics

View full text Add to dashboard Cite

We have studied the dependence of the electron in-plane g factor and spin decoherence time on the built-in electric field (Ei) at the position of a single layer of self-assembled (In,Ga)As∕GaAs quantum dots (QDs). Control of Ei is achieved by inducing screening charges in a p-i-n GaAs matrix with a continuous wave (cw) laser. Using a time-resolved pump-probe technique to measure the spin dynamics via the magneto-optical Kerr effect, we observe a large hole spin decoherence time of 440ps. Measurements as function of the cw laser power and, thus, of Ei show that the electron spin decay time in the QDs depends strongly on Ei and decreases from 310to110ps with increasing Ei. We attribute this effect to increasing tunneling rates of electrons out of the QDs at high Ei. We observe a slight increase of the electron g factor from 0.40±0.03 to 0.46±0.04 with increasing Ei, which might be a result of a changing wavefunction as a result of a different confinement potential due to Ei.

show abstract

“…The effects reported in this work are also applicable in the In x Ga 1Àx Sb-GaSb strained p-type quantum well system, where the heavy hole spin state is projected in the growth direction, leading to spin confinement. 29 Undoped p-Ge strained quantum wells behave as a spin 63/2 system with the spins oriented in the strain (growth) direction. Any Rashba spin-orbit coupling effect is likely to be due to LH states that can be occupied depending on the details of the strain in the device, the confining potential, and the p-type doping level.…”

Section: Discussionmentioning

confidence: 99%

Spin-splitting in p-type Ge devices

Holmes

Newton

Llandro

et al. 2016

Journal of Applied Physics

View full text Add to dashboard Cite

Compressively strained Ge quantum well devices have a spin-splitting in applied magnetic field that is entirely consistent with a Zeeman effect in the heavy hole valence band. The spin orientation is determined by the biaxial strain in the quantum well with the relaxed SiGe buffer layers and is quantized in the growth direction perpendicular to the conducting channel. The measured spinsplitting in the resistivity q xx agrees with the predictions of the Zeeman Hamiltonian where the Shubnikov-deHaas effect exhibits a loss of even filling factor minima in the resistivity q xx with hole depletion from a gate field, increasing disorder or increasing temperature. There is no measurable Rashba spin-orbit coupling irrespective of the structural inversion asymmetry of the confining potential in low p-doped or undoped Ge quantum wells from a density of 6 Â 10 10 cm À2 in depletion mode to 1.7 Â 10 11 cm À2 in enhancement. Published by AIP Publishing.

show abstract

Two-dimensional spin confinement in strained-layer quantum wells

Cited by 79 publications

References 23 publications

Effective g factor of low-density two-dimensional holes in a Ge quantum well

Effective g factor of low-density two-dimensional holes in a Ge quantum well

Optical control over electron g factor and spin decoherence in (In,Ga)As∕GaAs quantum dots

Spin-splitting in p-type Ge devices

Contact Info

Product

Resources

About