Two-dimensional SnO ultrathin epitaxial films: Pulsed laser deposition growth and quantum confinement effects

Recent progress of heterostructures based on two dimensional materials and wide bandgap semiconductors

“…Moreover, Gao et al investigated the TMDs MoSe2/WSe2 heterostructure photodetector based on epitaxial n-doped 4H-SiC which provided enhanced photo-response behavior through gate modulation, exhibiting low leakage current, high stability and fast photoresponse. [108] The maximum responsivity of the heterostructure photodetector was 7.17 A/W, the corresponding maximum EQE and detectivity were 1.67 × 10 3 % and 5.51 × 10 11 Jones with a maximum Ilight/Idark ratio of ∼10 3 . Many electrons in this n-type heterostructure can participate in the photocurrent, increasing the carrier concentration at the gate voltage, and resulting an EQE much high than 100%.…”

“…In figure 10(a), Goel et al introduced the UV photodetector based on MoS 2 /GaN heterostructure synthesized by wafer-scale sputtering method [91]. The great absorption of light by several layers of MoS 2 film led to high performance of MoS 2 /GaN photodetector, showing high external spectral responsivity (∼10 3 A W −1 ) and detectivity (∼10 11 Jones) with very fast response time (∼5 ms), as displayed in figures 10(b) and (c). The observed responsivity and detectivity decreased with increasing light intensity due to the presence of trap states at the MoS 2 /GaN interface and in the MoS 2 thin film.…”

“…[6][7][8] Also, the van der Waals (vdW) interactions between layers of 2D materials are not restricted by chemical bonding and interfacial lattice matching, so they can be seamlessly integrated on crystalline or amorphous, rigid or flexible substrates. [9][10][11] In addition to graphene (GN) [1,3] , other 2D materials have also attracted widespread attentions, such as the twodimensional Transition Metal Dichalcogenides (TMDs) [12,13] , two-dimensional topological insulators (TI) [14] , black phosphorus (BP) [15] , hexagonal boron nitride (hBN) [16] , MXene [17] , etc. The superior properties and rapid development of the 2D materials family has greatly boosted its performance and applications in electronic and optoelectrical devices [18,19] , including photodetectors from ultraviolet to infrared [20][21][22] , field effect transistors [23][24][25] , memristor [26,27] , and novel energy devices [28,29] .…”

“…The 2D materials with atomic-level thickness exhibit large specific surface areas and excellent tunability, significant carrier mobility [4,5], high electrical conductivity, and excellent optoelectronic properties, etc [6][7][8]. Also, the van der Waals (vdW) interactions between layers of 2D materials are not restricted by chemical bonding and interfacial lattice matching, so they can be seamlessly integrated on crystalline or amorphous, rigid or flexible substrates [9][10][11]. In addition to GN [1,3], other 2D materials have also attracted widespread attentions, such as the 2D transition metal dichalcogenides (TMDs) [12,13], 2D topological insulators (TI) [14], black phosphorus (BP) [15], hexagonal boron nitride [16], MXene [17], etc.…”