Recent progress of heterostructures based on two dimensional materials and wide bandgap semiconductors

Abstract

Recent progress in the synthesis and assembly of two-dimensional (2D) materials has laid the foundation for various applications of atomically thin layer films. These 2D materials possess rich and diverse properties such as layer-dependent band gaps, interesting spin degrees of freedom, and variable crystal structures. They exhibit broad application prospects in micro-nano devices. In the meantime, the wide bandgap semiconductors (WBS) with an elevated breakdown voltage, high mobility, and high thermal conductivity have shown important applications in high-frequency microwave devices, high-temperature and high-power electronic devices. Beyond the study on single 2D materials or WBS materials, the multi-functional 2D/WBS heterostructures can promote the carrier transport at the interface, potentially providing novel physical phenomena and applications, and improving the performance of electronic and optoelectronic devices. In this review, we overview the advantages of the heterostructures of 2D materials and WBS materials, and introduce the construction methods of 2D/WBS heterostructures. Then, we present the diversity and recent progress in the applications of 2D/WBS heterostructures, including photodetectors, photocatalysis, sensors, and energy related devices. Finally, we put forward the current challenges of 2D/WBS heterostructures and propose the promising research directions in the future.

Salt‐Assisted Low‐Temperature Growth of 2D Bi2O2Se with Controlled Thickness for Electronics

“…The rise of 2D materials has garnered considerable interest caused of their planar structures, free of dangling bonds, layer‐dependent electronic band structure, excellent mechanical flexibility, outperformed electrical, optical, thermoelectric, and electrochemical characteristics, and compatibility with other materials. [ 1–13 ] In the past few years, 2D materials have been employed for the state‐of‐the‐art electronic and optoelectronic devices. [ 14–18 ] Among the broad list of reported 2D materials, graphene is the most‐prominent material due to its remarkably high carrier mobility.…”

“…flexibility, outperformed electrical, optical, thermoelectric, and electrochemical characteristics, and compatibility with other materials. [1][2][3][4][5][6][7][8][9][10][11][12][13] In the past few years, 2D materials have been employed for the state-of-the-art electronic and optoelectronic devices. [14][15][16][17][18] Among the broad list of reported 2D materials, graphene is the most-prominent material due to its remarkably high carrier mobility.…”

Transition metal dichalcogenide MXY (M = Mo, W; X, Y = S, Se) monolayer: Structure, fabrication, properties, and applications

“…Water splitting requires stable photocatalysts having high optical adsorption and low reaction barriers. Recent progress on photocatalysts has been reported by researchers [51,52]. Ju et al found that the WSSe monolayer shows good photocatalysis properties from DFT simulations.…”

Optimized dopant imaging for GaN by a scanning electron microscopy

“…24,36,37 Gallium nitride (GaN), one of the third-generation wide bandgap semiconductors, has received much attention owing to its high breakdown electric fields, high thermal conductivity, good chemical stability and strong irradiation resistance (related to its high internal and external quantum efficiencies). 38,39 Therefore, GaN has broad application prospects in the fields of optoelectronics, highpower devices and high-frequency microwave devices. Recently, SEM has been utilised to characterise the spatial distribution of dopants in p-i-n GaN specimens by establishing a correlation between the SE intensity and the doping contrast.…”