1983
DOI: 10.1109/t-ed.1983.21324
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Two-dimensional simulation of a 2-µm CMOS process using ROMANS II

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Cited by 9 publications
(6 citation statements)
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“…(1), (2) or (9)] numerically in the literature. The earlier simulators (Penumalli 1983;Maldoado et al 1983;Lorenz et al 1985;Kump and Dutton 1988;Nishi et al 1989;Rorris et al 1990;Fair et al 1991) were based on the PDE solution by finite difference method (FDM). On the other hand, the second generation simulators (Borucki et al t985;O'Brien et al 1985;Collard and Taniguchi 1986) were built on finite element method (FEM) due to the ease of handling moving boundary problems in FEM.…”
Section: Algorithm For 2d-partial Differential Equation Solvermentioning
confidence: 99%
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“…(1), (2) or (9)] numerically in the literature. The earlier simulators (Penumalli 1983;Maldoado et al 1983;Lorenz et al 1985;Kump and Dutton 1988;Nishi et al 1989;Rorris et al 1990;Fair et al 1991) were based on the PDE solution by finite difference method (FDM). On the other hand, the second generation simulators (Borucki et al t985;O'Brien et al 1985;Collard and Taniguchi 1986) were built on finite element method (FEM) due to the ease of handling moving boundary problems in FEM.…”
Section: Algorithm For 2d-partial Differential Equation Solvermentioning
confidence: 99%
“…With time the device feature size was pushed from micron to sub-micron region and the need of 2D modeling became inevitable. The first 2-D process simulator "BIRD" was reported from Stanford University (Lee 1978), which was followed by simulators like SUPRA (Chin et al 1981), BICEPS (Penumalli 1983), ROMANS-II (Maldoado et al 1983), COMPOSITE (Lorenz et al 1985), SUPREM-IV (Kump and Dutton 1988), OPUS (Nishi et al 1989), FINDPRO (Rorris et al 1990), PREDICT-2 (Fair et al 1991), etc. Recently, more exhaustive and complete 2D process simulators: FEDSS (Borucki et al 1985), SAFEPRO (O'Brien et al 1985), IMPACT (Collard and Taniguchi 1986) based on finite element approach have also been developed because of the ease of tackling moving boundary.…”
Section: Introductionmentioning
confidence: 99%
“…Dans le cas de l'arsenic [19], figure 4, l'accélération de la diffusion est également présente, mais son effet est limité par la formation d'agglomérats. L'équilibre entre concentration totale et active, équation (9), est illustré sur le profil en coupe, figure 4b, et fait nettement apparaître la limite de solubilité de l'arsenic substitutionnel.…”
Section: Les Modèles Physiquesunclassified
“…-Différentes solutions ont déjà été proposées pour résoudre les équations de diffusion dans un domaine évolutif tout en tenant compte de la ségrégation à l'interface S/S'02. Les techniques les plus couramment utilisées sont des méthodes de transformation ponctuelle [4,5,9] pour lesquelles les équations sont résolues dans un domaine stationnaire ou des méthodes d'élimination de noeuds [7].…”
Section: Simulation Du Couplage Entre Impuretés -unclassified
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