Two‐Dimensional Silicon for (Photo)Catalysis

Wang, Shenghua; Wang, Chenhao; Pan, Wangbo; Sun, Wei; Yang, Deren

doi:10.1002/solr.202100596

Cited by 2 publications

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“…Furthermore, it also preserves the advantages of silicon material, which is the most important material in modern life. Therefore, two-dimensional silicon may have broad application prospects in the fields of electricity, optics, chemistry and even biology [ 5 , 6 , 7 , 8 , 9 , 10 ].…”

Section: Introductionmentioning

confidence: 99%

Enhanced Optical and Electronic Properties of Silicon Nanosheets by Phosphorus Doping Passivation

Yang

2023

Materials

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In this paper, we use the spin-on-dopant technique for phosphorus doping to improve the photoelectric properties of soft-chemical-prepared silicon nanosheets. It was found that the luminescence intensity and luminescence lifetime of the doped samples was approximately 4 fold that of the undoped samples, due to passivation of the surface defects by phosphorus doping. Meanwhile, phosphorus doping combined with high-temperature heat treatment can reduce the resistivity of multilayer silicon nanosheets by 6 fold compared with that of as-prepared samples. In conclusion, our work brings soft-chemical-prepared silicon nanosheets one step closer to practical application in the field of optoelectronics.

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Section: Introductionmentioning

confidence: 99%

Enhanced Optical and Electronic Properties of Silicon Nanosheets by Phosphorus Doping Passivation

Yang

2023

Materials

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Binary and Ternary Polymer Solar Cells Based on a Wide Bandgap D‐A Copolymer Donor and Two Nonfullerene Acceptors with Complementary Absorption Spectral

et al. 2021

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A new wide-bandgap conjugated D-A polymer denoted as P106 with a medium acceptor dithieno [2,3-e;3'2'-g]isoindole-7,9 (8H) (DTID) unit and strong 2-dodecylbenzo[1,2-b:3,4-b':6,5b"]trithiophene (3TB) donor units shows an optical bandgap of 2.04 and highest occupied molecular orbital energy level of À 5.56 eV. P106 is used as the donor and two nonfullerene acceptors-medium bandgap DBTBT-IC and narrow band Y18-DMO-are used as acceptors for the construction of binary and ternary bulk heterojunction polymer solar cells. The optimized polymer solar cells based on P106 : DBTBT-IC and P106 : Y18-DMO exhibit power conversion efficiencies of 11.76 % and 14.07 %, respectively. The short-circuit current density (22.78 mA cm À 2 ) for the P106 : Y18-DMO device is higher than that for P106 : DBTBT-IC (18.56 mA cm À 2 ) one, which could be attributed to the more photon harvesting efficiency of the P106 : Y18-DMO active layer. In light of the high short-circuit current densities and fill factors for the Y18-DMO based device and the high value of open circuit voltage of the DBTBT-IC based device, ternary polymer solar cells are fabricated by using ternary active layer (P106 : DBTBT-IC : Y18-DMO) and achieve a power conversion efficiency of 16.49 % with low energy loss of 0.47 eV.

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Two‐Dimensional Silicon for (Photo)Catalysis

Cited by 2 publications

References 0 publications

Enhanced Optical and Electronic Properties of Silicon Nanosheets by Phosphorus Doping Passivation

Enhanced Optical and Electronic Properties of Silicon Nanosheets by Phosphorus Doping Passivation

Binary and Ternary Polymer Solar Cells Based on a Wide Bandgap D‐A Copolymer Donor and Two Nonfullerene Acceptors with Complementary Absorption Spectral

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