Enhanced Optical and Electronic Properties of Silicon Nanosheets by Phosphorus Doping Passivation

Abstract

In this paper, we use the spin-on-dopant technique for phosphorus doping to improve the photoelectric properties of soft-chemical-prepared silicon nanosheets. It was found that the luminescence intensity and luminescence lifetime of the doped samples was approximately 4 fold that of the undoped samples, due to passivation of the surface defects by phosphorus doping. Meanwhile, phosphorus doping combined with high-temperature heat treatment can reduce the resistivity of multilayer silicon nanosheets by 6 fold compared with that of as-prepared samples. In conclusion, our work brings soft-chemical-prepared silicon nanosheets one step closer to practical application in the field of optoelectronics.

High conductivity characteristics of phosphorus-doped nanocrystalline silicon thin films by KrF pulsed excimer laser irradiation method

“…Recently, numerous efforts have been devoted to exploring an efficient silicon-based light source owing to its potential application in monolithic optoelectronic integration. [1][2][3] Among them, hydrogenated nanocrystalline silicon (nc-Si:H) is considered to be one of the most likely materials to be applied in silicon-based light sources in the future. In addition, some nanoelectronic devices are also fabricated using nc-Si:H due to its advantages, such as adjustable band gap width, high radiative recombination efficiency and good compatibility with silicon micro-nano processing technology.…”