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1990
DOI: 10.1103/physrevb.41.8203
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Two-dimensional Si crystal growth during thermal annealing of Au/polycrystalline-Si bilayers

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Cited by 20 publications
(7 citation statements)
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“…Another purpose of incorporating Au NPs into LNO is to facilitate LNO nucleation and growth, minimize the growth domains and thus achieve better LNO film properties required for photonic device integration. Such Au‐facilitated epitaxial growth has been demonstrated in epi‐Si and other semiconductor thin films, but not yet in the growth of oxide dielectrics. As an initial demonstration, a pulsed laser deposition (PLD) technique has been used to directly grow Au‐LNO hybrid thin films.…”
Section: Introductionmentioning
confidence: 99%
“…Another purpose of incorporating Au NPs into LNO is to facilitate LNO nucleation and growth, minimize the growth domains and thus achieve better LNO film properties required for photonic device integration. Such Au‐facilitated epitaxial growth has been demonstrated in epi‐Si and other semiconductor thin films, but not yet in the growth of oxide dielectrics. As an initial demonstration, a pulsed laser deposition (PLD) technique has been used to directly grow Au‐LNO hybrid thin films.…”
Section: Introductionmentioning
confidence: 99%
“…It should be mentioned that (re)crystallization and layer exchange were observed in various metal-semiconductor [20,26] systems and even if the Si supply is already completely or partially crystalline. Most of the authors agreed [27,28] on the fact that the concentration of Si dissolved in the Al is different at the interfaces Al/a-Si (or Al/pc-Si) from that at the Al/c-Si interface and furthermore this concentration gradient is generated by the difference in Gibbs free energy between the initial and the final state.…”
Section: The Layers Exchange Process and Growth Kineticsmentioning
confidence: 97%
“…16 It was observed that large grains would grow in size while the smaller grains would be dissolved into the Au/Si alloy. Without the overlayer, the Au is anticipated to rapidly alloy with the substrate, since previous studies 17, 18 have shown small Au particles emerging at the other side of the thick Si wafer due to diffusion of Au through the Si wafer during annealing at 950°C. The preparation for the wire growth through the VLS growth mechanism in our system involves first depositing a layer of Au on the Si͑111͒ substrate followed by the deposition of a Si overlayer both deposited at room temperature.…”
Section: Introductionmentioning
confidence: 99%